Semiconductor structure and forming method thereof

Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method of the semiconductor structure comprises the following steps: a semiconductor substrate comprising an active region structure and a shallow trench isolation structure is provided; a gate structure and spacers on the sidewalls of the gate structure are formed on the surface of the semiconductor substrate, the gate structure comprises a gate dielectric layer on the surface of the semiconductor substrate, the gate dielectric layer comprises a dielectric layer on the surface of the semiconductor substrate and a metal layer on the surface of the dielectric layer, and part of the gate structure and part of the spacers are disposed on the surface of the shallow trench isolation structure; and part of the metal layer on the shallow trench isolation structure is modified to make the part of the metal layer converted into a protective layer. The protective layer protects the gate dielectric layer on the surface of the active region structure from being corroded and consumed by acid, and failure of semiconductor devices is avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices are constantly decreasing, and the geometric dimensions of devices are also shrinking continuously following Moore's Law. When the size of the semiconductor device is reduced to a certain extent, various problems caused by the semiconductor device approaching the physical limit appear one after another. In the field of semiconductor device manufacturing, the most challenging problem is how to solve the problem of device reliability degradation, which is mainly caused by the continuous reduction of the thickness of the traditional gate dielectric layer. The method provided by the prior art replaces traditional gate dielectric materials with high-k gate dielectric mat...

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Problems solved by technology

[0004] Although the introduction of gate dielectric layers and metal gates including high-k materials and metal materials can improve the electrical performance of semiconductor devices, it has been found in practical applications that due to the continuous shrinking of the device geometry, the manufacturing process is complicated and difficult to control stably. prone to device failure

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