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Piezoelectric single crystal wafer

A piezoelectric single crystal, piezoelectric sheet technology, applied in piezoelectric devices/electrostrictive devices, circuits, piezoelectric/electrostrictive/magnetostrictive devices, etc. High process requirements, uneven thickness of the adhesive layer, affecting the performance of piezoelectric devices, etc., to achieve the effect of saving materials, reducing bonding area, and low cost

Inactive Publication Date: 2016-06-08
HENAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing piezoelectric single crystal usually adopts the method of completely bonding the piezoelectric sheet and the widest surface of the non-piezoelectric material support, and coats a certain thickness and uniform coating between the piezoelectric sheet and the non-piezoelectric material support. adhesive layer, but this method has relatively high requirements on the thickness of the adhesive layer and uniform coating process, and has the following disadvantages: (1) It is easy to cause uneven thickness of the adhesive layer due to improper process control, which will affect the pressure. The performance of electrical devices; (2) Bubbles are easily generated in the adhesive layer due to improper process control, which is likely to generate weak electrical signals and cause piezoelectric devices to fail; (3) If the existing piezoelectric single crystal needs piezoelectric The sheet and the metal are bonded together. In order to avoid short circuit, the bonding glue used in the middle must be insulating glue, and the selection of materials is greatly restricted.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In this embodiment, the two bases of the piezoelectric single crystal are sapphire sheets, the two widest surfaces of the piezoelectric sheet are all coated with electrodes, and the non-piezoelectric material support is a stainless steel sheet. The specific preparation method of the piezoelectric single crystal in this embodiment is as follows:

[0038] (1) Select two sapphire sheets of the same size and a piezoelectric ceramic sheet and a stainless steel sheet with a size of 30*5*0.5mm, where the piezoelectric ceramic sheet is polarized along the thickness direction and the two widest sides of the piezoelectric ceramic sheet The surface has been plated with electrodes;

[0039] (2) Place the negative first, and then place the piezoelectric ceramic sheet and the stainless steel sheet vertically on the negative sheet. The piezoelectric ceramic sheet and the stainless steel sheet are arranged in parallel, and the distance between the piezoelectric ceramic sheet and the st...

Embodiment 2

[0044] piezoelectric unimorph

[0045] Change the negative in the above-mentioned embodiment 1 into a ring-shaped sapphire sheet, as attached Figure 4-6 shown. The central hole in the middle of the sapphire sheet is used to penetrate the electrode wire, vent the gas or fix other required devices, etc., to meet the needs under special conditions.

Embodiment 3

[0047] A piezoelectric single crystal without electrodes in the contact part of the piezoelectric sheet and the negative sheet

[0048] Replace the piezoelectric ceramic sheet in the above-mentioned embodiment 1 with a piezoelectric ceramic sheet that has an uncoated electrode part 5 of about 1 mm at the contact position between the piezoelectric ceramic sheet and the two bottom sheets, as shown in the attached Figure 7-9 shown. At this time, the material selection of the two negative films can be insulating sapphire, or conductive stainless steel, brass, titanium, etc., so as to increase the range of material selection and reduce costs.

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Abstract

The invention discloses a piezoelectric single crystal wafer, and belongs to the technical field of piezoelectric components. According to the technical scheme, the piezoelectric single crystal wafer is characterized by comprising two parallel substrates, a piezoelectric patch and a non-piezoelectric material supporting body, and the piezoelectric patch is arranged between the two substrates; the piezoelectric patch is vertically fixed between the two substrates through glue, and the piezoelectric patch is polarized in the thickness direction or the radial direction. The piezoelectric single crystal wafer is easy to manufacture, high in structural stability, wide in application range, low in cost and good in performance, and has wide application prospects in the field of micro-nano operation and control.

Description

technical field [0001] The invention belongs to the technical field of piezoelectric components, in particular to a piezoelectric single crystal. Background technique [0002] With the rapid development of nanotechnology, the application of piezoelectric devices is becoming more and more extensive, and piezoelectric single crystals, as an important device in piezoelectric devices, also play a wide range of applications. The working principle of the existing piezoelectric single crystal is: the piezoelectric sheet will elongate or shrink in the length direction under the action of the alternating driving signal, and the non-piezoelectric material support body bonded together with it has no piezoelectric effect , the length remains unchanged, therefore, the piezoelectric sheet bends under the tension of the non-piezoelectric material support, and then the overall structure bends under the drive of the piezoelectric sheet. [0003] The existing piezoelectric single crystal usu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/053H01L41/09H10N30/88H10N30/20
CPCH10N30/88H10N30/886H10N30/206
Inventor 李全锋孙涵崔明焕付士林赵雯
Owner HENAN NORMAL UNIV