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A stress-assisted magnetic storage device, its preparation method and magnetic field writing method

A storage device and auxiliary magnetic technology, applied in the field of magnetic storage, can solve the problems of magnetic recording difficulties, increase device energy consumption, and technical implementation difficulties, and achieve the effects of improving data storage security, reducing energy consumption, and increasing storage density.

Active Publication Date: 2018-11-09
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Correspondingly, when the magnetic recording medium with a large coercive force is written in a magnetic field, if the writing magnetic field is low, the magnetization direction of the magnetic medium particles cannot be reversed effectively, resulting in difficulties in magnetic recording. Therefore, it is necessary to provide a larger write magnetic field
However, the larger the write magnetic field, the more difficult it will be to realize the technology, and it will greatly increase the energy consumption of the device.

Method used

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  • A stress-assisted magnetic storage device, its preparation method and magnetic field writing method
  • A stress-assisted magnetic storage device, its preparation method and magnetic field writing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] In this example, if figure 1 As shown, the multi-layer film structure of the stress-assisted magnetic storage device is as follows from bottom to top: substrate 5, variable magnetic material layer 2, magnetic medium layer 3, protective layer 4, voltage generating device 6, and deformation generating device 7.

[0041] The substrate 5 is a flexible substrate, which is made of commercially purchased flexible and high temperature resistant copper foil.

[0042] The magnetically variable material layer 2 is made of FeRh, and the FeRh material can undergo a magnetically variable transition from antiferromagnetism to ferromagnetism at around room temperature under the action of stress.

[0043]The magnetic medium layer 3 is composed of high anisotropy L 10 Ordered FePt structure.

[0044] The protective layer 4 is made of Ta material.

[0045] When the magnetic field is written, the flexible substrate 5 is deformed by the deformation generating device 7 to generate stress,...

Embodiment 2

[0056] In this example, if figure 2 As shown, the multilayer film structure of the stress-assisted magnetic memory device is as follows from bottom to top: a substrate 5 , a variable magnetic material layer 2 , a magnetic medium layer 3 , and a protective layer 4 .

[0057] Substrate 5 is a ferroelectric substrate, using Pb(Mg,Nb)O 3 -PbTiO 3 (PMNPT) composition.

[0058] The magnetically variable material layer 2 is made of FeRh, and the FeRh material can undergo a magnetically variable transition from antiferromagnetism to ferromagnetism at around room temperature under the action of stress.

[0059] The magnetic medium layer 3 is composed of high anisotropy L 10 Ordered FePt structure.

[0060] The protective layer 4 is made of Ta material.

[0061] When the magnetic field is written, the ferroelectric substrate 5 is connected to the voltage generating device 6, and the voltage generating device 6 applies a voltage to the ferroelectric substrate 5 to generate stress t...

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Abstract

The present invention provides a stress-assisted magnetic storage device. The device has layers of membrane structures consisting of a substrate layer, a metamagnetism material layer, a magnetic medium layer and a protective layer arranged in order. The deformation is applied to a flexible substrate layer to generate stress, or the voltage is applied to a ferroelectric substrate layer to generate stress through a piezoelectric effect so as to allow the metamagnetism materials to be located in the ferromagnetic or antiferromagnetic state at the action of the stress; when the magnetic field is written in, the stress is controlled to allow the metamagnetism materials to be located in the ferromagnetic state, the coercive force of the magnetic medium layer is reduced through a coupling effect, and the write-in magnetic field of a write-in magnetic head is reduced so as to reduce the energy consumption; and after the writing of the magnetic field is completed, the stress is controlled to allow the metamagnetism materials to be located in the antiferromagnetic state, the coercive force of the magnetic medium layer is returned to the original state so as to increase the storage density and improve the data storage safety of the magnetic storage device.

Description

technical field [0001] The invention relates to the technical field of magnetic storage, in particular to a stress-assisted magnetic storage device, a preparation method thereof and a magnetic field writing method. Background technique [0002] In recent years, with the rapid growth of magnetic recording density and the reduction of cost per bit, magnetic recording technology has been applied to more and more fields including computers, and has become more and more closely related to people, such as disks in computers , Magnetic cards for phone calls, bank credit cards, etc., all use magnetic signals to record information. [0003] Magnetic recording technology improves people's work efficiency and brings great convenience to our life. However, the rapid increase of magnetic recording density also brings challenges to traditional magnetic recording technology. Generally, the improvement of the magnetic recording density is mainly realized by reducing the grain size of the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11B5/66
Inventor 谢亚丽李润伟詹清峰刘宜伟王保敏
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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