Solid-state imaging device, camera module, and method for manufacturing solid-state imaging device
A technology of a solid-state imaging device and a manufacturing method, which are applied in the fields of electric solid-state devices, radiation control devices, image communication, etc., can solve problems such as deterioration of imaging characteristics of the solid-state imaging device.
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no. 1 Embodiment ＞
[0040] figure 1 It is a sectional view of the solid-state imaging device of the first embodiment. figure 1 The illustrated solid-state imaging device 10 includes a sensor substrate 11 , a transparent resin layer 12 , and a transparent substrate 13 .
[0041] The sensor substrate 11 receives light and performs photoelectric conversion to generate an electrical signal corresponding to the received light. The sensor substrate 11 is configured by providing a light receiving unit 15 , various signal processing circuits (not shown), and the like on a semiconductor substrate 14 .
[0042] The semiconductor substrate 14 is, for example, a thinned silicon substrate. In addition, the light receiving unit 15 is formed substantially in the center of the semiconductor substrate 14 and is configured by arranging a plurality of pixels two-dimensionally. Each pixel includes at least a photodiode 15a for performing photoelectric conversion, and a microlens 15b for condensing light on the ph...
no. 2 Embodiment ＞
[0073] Figure 4 It is a sectional view of the solid-state imaging device of the second embodiment. Figure 4 The illustrated solid-state imaging device 20 differs from the solid-state imaging device 10 of the first embodiment in the structure of the transparent resin layer 22 . Therefore, the transparent resin layer 22 of the solid-state imaging device 20 of the second embodiment will be described below. In addition, the sensor substrate 11 and the transparent substrate 13 of the solid-state imaging device 20 are the same as the sensor substrate 11 and the transparent substrate 13 of the solid-state imaging device 10 of the first embodiment. Therefore, the sensor substrate 11 and the transparent substrate 13 of the solid-state imaging device 20 are given the same symbols as those of the sensor substrate 11 and the transparent substrate 13 of the solid-state imaging device 10 of the first embodiment, and the sensor substrate 11 and the transparent substrate 13 of the solid-st...
no. 3 Embodiment ＞
[0104] Figure 6 It is a sectional view of the solid-state imaging device of the third embodiment. Figure 6 The illustrated solid-state imaging device 30 differs from the solid-state imaging device 10 of the first embodiment in that the upper surface of the transparent substrate 13 is coated with an IR (Infrared Ray, infrared ray) cutoff. That is, in the solid-state imaging device 30 of the third embodiment, the infrared cutoff film 38 is provided on the upper surface of the transparent substrate 13 . In addition, the sensor substrate 11, transparent resin layer 12, and transparent substrate 13 of the solid-state imaging device 30 are the same as the sensor substrate 11, transparent resin layer 12, and transparent substrate 13 of the solid-state imaging device 10 of the first embodiment. Therefore, the sensor substrate 11, the transparent resin layer 12, and the transparent substrate 13 of the solid-state imaging device 30 are given the same symbols as those of the sensor su...
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