Formation method of semiconductor device

A semiconductor and device technology, applied in the field of semiconductor device formation, can solve problems such as the need to improve the electrical performance of semiconductor devices, achieve good electrical isolation performance, prevent leakage or breakdown, and prevent etching.

Active Publication Date: 2016-06-29
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in practical applications, it is found that the electrical performance of semiconductor devices still needs to be improved.

Method used

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  • Formation method of semiconductor device
  • Formation method of semiconductor device
  • Formation method of semiconductor device

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Embodiment Construction

[0033] It is known from the background art that the electrical performance of semiconductor devices formed in the prior art needs to be improved.

[0034] Research has found that in order to form embedded silicon germanium or embedded silicon carbon, it is usually necessary to etch the substrate on both sides of the gate structure in advance to form grooves; The impurities introduced by the etching process provide a good interface basis for the epitaxial stress layer; after cleaning, the epitaxial process is used to form a stress layer that fills the groove.

[0035] However, in general, there is an isolation structure in the substrate that plays an electrical isolation effect, and the filling material of the isolation structure is SiO 2 or SiON, and the groove will expose the sidewall surface of the isolation structure; and during the cleaning process, the cleaning process will 2Or SiON is etched, the cleaning process causes etching to the sidewall of the isolation structure...

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Abstract

The invention provides a formation method of a semiconductor device. The formation method of a semiconductor device comprises the steps: providing a substrate with isolation structures; forming a gate structure on the surface of part of the substrate between the adjacent isolation structures; forming a groove exposing the side wall of the isolation structure in the substrate at two sides of each gate structure; nitriding the side wall of the exposed isolation structure, and forming an anti-corrosion layer on the surface of the side wall of the isolation structure; after forming the anti-corrosion layer, cleaning the surface of the bottom and the side wall of the groove; and forming a stress layer filling the groove. The formation method of a semiconductor device can prevent cleaning from etching the isolation structure so as to enable the isolation structure to maintain good shape and provide good interface performance for forming the stress layer, and can enable the isolation structure to maintain good electrical isolation performance and can optimize the electrical properties for the formed semiconductor device.

Description

technical field [0001] The invention relates to the technology in the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] With the continuous development of semiconductor technology, carrier mobility enhancement technology has been widely studied and applied. Improving the carrier mobility in the channel region can increase the driving current of MOS devices and improve the performance of the devices. [0003] In the existing manufacturing process of semiconductor devices, since stress can change the energy gap and carrier mobility of silicon materials, it has become more and more common means to improve the performance of semiconductor devices through stress. Specifically, by properly controlling the stress, the mobility of carriers (electrons in NMOS devices, holes in PMOS devices) can be increased, thereby increasing the driving current, thereby greatly improving the performance of semiconductor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336
Inventor 禹国宾
Owner SEMICON MFG INT (SHANGHAI) CORP
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