N-type lateral double-diffused metal oxide semiconductor field effect transistor

An oxide semiconductor, lateral double diffusion technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as weak output current capability

Inactive Publication Date: 2016-06-29
CSMC TECH FAB2 CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional N-type lateral double-diffused metal oxide semiconductor field effect transistor has weak output current capability

Method used

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  • N-type lateral double-diffused metal oxide semiconductor field effect transistor
  • N-type lateral double-diffused metal oxide semiconductor field effect transistor

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Embodiment Construction

[0016] In order to make the objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0017] In this specification and drawings, reference signs N and P assigned to layers or regions indicate that these layers or regions include a large number of electrons or holes, respectively. Further, the reference marks + and − assigned to N or P indicate that the concentration of the dopant is higher or lower than in layers not so assigned to the marks. In the following description of the preferred embodiments and the drawings, similar components are assigned similar reference numerals and redundant descriptions thereof are omitted here.

[0018] An N-type lateral double-diffused metal oxide semiconductor field effect transistor, comprising a substrate; a first N well formed on the substrate; a second N well formed on the surface of the...

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Abstract

The invention discloses an N-type lateral double-diffused metal oxide semiconductor field effect transistor, which comprises a substrate; a first N-well formed on the substrate; a second N-well, a first P-well, a third N-well and a fourth N-well which are formed on the surface of the first N-well; a source lead-out region formed on the first P-well; a drain lead-out region formed on the fourth N-well; a first gate lead-out region formed on surfaces of the second N-well and the first P-well; and a second gate lead-out region formed on surfaces of the first P-well and the third N-well, wherein the first gate lead-out region and the second gate lead-out region are led out respectively through metal leads and connected as the gate of the N-type lateral double-diffused metal oxide semiconductor field effect transistor. The N-type lateral double-diffused metal oxide semiconductor field effect transistor is provided with the first gate lead-out region, and the second gate lead-out region, and forms a new current channel through the second N-well and the first N-well, so that the current capability nearly doubles and the output current capability is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to an N-type lateral double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] The power field effect transistor mainly includes two types of vertical double-diffused MOSFET (VDMOS) and lateral double-diffused MOSFET (LDMOS). Among them, compared with the vertical double diffused field effect transistor VDMOS, the lateral double diffused field effect transistor LDMOS has many advantages, for example, the latter has better thermal stability and frequency stability, higher gain and durability, lower Feedback capacitance and thermal resistance, as well as constant input impedance and simpler bias current circuit. The output current capability of the traditional N-type lateral double-diffused metal oxide semiconductor field effect transistor is relatively weak. figure 1 It is a schematic structural diagram of a traditional N-typ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/7816H01L29/0878H01L29/1083H01L29/1095H01L29/408H01L29/42368H01L29/4916H01L29/735H01L29/7831
Inventor 胡小龙张广胜卞鹏张森
Owner CSMC TECH FAB2 CO LTD
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