High-density antifuse semiconductor memory

Abstract

The invention discloses a high-density antifuse semiconductor memory, relating to an integrated circuit, in particular to a semiconductor memory and a programmable logic device. The invention comprises a plurality of memory cells, and each memory cell is composed of an MOS tube and a memory capacitor. The invention is characterized in that parts of or all memory capacitors form a plurality of capacitor groups; each capacitor group is composed of three or more memory capacitors sharing one polar plate. The invention fully utilizes the limited area of a silicon chip and improves the density of a non-volatile disposable programmable semiconductor memory.

Description

technical field [0001] The present invention relates to integrated circuits, in particular to semiconductor memories and programmable logic devices. Background technique [0002] Non-volatile programmable semiconductor memory is widely used in the field of electronic technology. Non-volatile means that the memory can still save data after power failure, and one-time programmable means that the memory can be written once by the user after leaving the factory. , then the data cannot be modified. [0003] The U.S. Patent No. 6215140 discloses the principle of storing data by using the silicon dioxide dielectric breakdown between the two plates of the capacitor. In this invention, a capacitor and a diode are connected in series at the intersection of the word line and the bit line. After the silicon dioxide dielectric between the two plates of the capacitor is broken down, there is a current path between the word line and the bit line. At the intersection point of , there is n...

AI Technical Summary

Problems solved by technology

[0006] The disadvantage of the existing technology is that the utilization rate of silicon chips is not high, which is not conducive to the integration of IC

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