Super-junction vertical double-diffusion metal oxide semiconductor tube

Abstract

The invention provides a super-junction vertical double-diffusion metal oxide semiconductor tube, comprising an N-type heavily-doped silicon substrate which is used as a drain region, wherein drain electrode metal is arranged on the lower surface of the N-type heavily-doped silicon substrate; an N-type doped silicon epitaxial layer is arranged on the upper surface of the N-type heavily-doped silicon substrate; a discontinuous P-type doped columnar semiconductor region is arranged in the N-type doped silicon epitaxial layer; a first P-type doped semiconductor region is arranged on the P-type doped columnar semiconductor region; the first P-type doped semiconductor region is arranged in the N-type doped silicon epitaxial layer; and the first P-type doped semiconductor region is internally provided with a second P-type doped semiconductor contact region and an N-type doped semiconductor source region. The super-junction vertical double-diffusion metal oxide semiconductor tube is characterized in that: the N-type doped semiconductor source region is connected with active electrode metal; the second P-type doped semiconductor contact region is connected with substrate metal; polycrystalline silicon which is used as an resistor is arranged below the active electrode metal and the substrate metal; and the polycrystalline silicon is respectively connected with the active electrode metal and the substrate metal, and top layer metal is connected with the substrate metal.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, relates to a silicon high-voltage power device affected by movable ion contamination, and is particularly suitable for silicon superjunction vertical double-diffused metal oxide field effect transistors (Superjunction VDMOS, namely superjunction VDMOS, as follows Both are abbreviated as super-junction VDMOS), more specifically, it relates to a silicon-made super-junction VDMOS terminal structure with high reliability under high-temperature reverse bias conditions. Background technique [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. Nowadays, power devices are developing towards higher working voltage, higher w...

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Problems solved by technology

[0005] Under the condition that the drain voltage of the device rises rapidly, the change of voltage reacts to form a displacement current on the parasitic capacitance, and the displacement current acts on the base resistance of the parasitic triode to generate a voltage, causing the parasitic triode to turn on and damage the device

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