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A method of building a metal gas element injection system

An injection system and gas technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of closed monitoring of difficult equipment and large coverage, and achieve precise control, easy disassembly, and easy monitoring and control. Effect

Active Publication Date: 2018-05-25
ANDESON SUPERCONDUCTING RF ACCELERATOR TECHCO
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method is mature in technology and has a large applicable coverage, it is difficult to effectively monitor the vacuum degree of the equipment in the existing method

Method used

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  • A method of building a metal gas element injection system
  • A method of building a metal gas element injection system
  • A method of building a metal gas element injection system

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Embodiment Construction

[0025] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.

[0026] Please refer to the attached Figures 1 to 5 , the embodiment of the present invention includes:

[0027] A method for building a metal gas element injection system uses a k-cell (evaporator for molecular beam epitaxy film formation) source for metal gas injection. In crystal growth, k-cell sources are often used as evaporators for relatively low partial pressure element implantation sources (eg, gallium, aluminum, mercury, arsenic). It is easy to control the temperature of the evaporated species and is often used in molecular beam epitaxy equipment. A typical k-cell unit contains a crucible (made of pyrolytic boron nitride, quartz, tungs...

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Abstract

The invention discloses a method for building a metal gas element injection system, and relates to the field of metal gas element injection systems. The method comprises the following steps: (1) vacuum system building; (2) vacuum leak detection; (3) vacuumizing; (4) baking; (5) heating; and (6) injection amount analysis. By adoption of the method provided by the invention, the metal gas element injection system can be built simply and feasibly, and disassembled conveniently; and meanwhile, the vacuum changing process can be monitored in time, the metal gas element injection system can be controlled precisely, and both the monitoring and control are facilitated.

Description

technical field [0001] The invention relates to the field of metal gas element injection systems, in particular to a method for building a metal gas element injection system. Background technique [0002] So far, there have been many methods for injecting various elements into EBIT (Electron Beam Ion Trap) devices. Although MEVVA ion sources are widely used, metal probes and organometallic compounds (such as C2H6Te, C3H9Sb), metal methyl compounds, methyl iodide and inert gas injection are also frequently used. But they cannot be applied to all elements. For example, the Chinese invention patent "Metal Plasma Source Ion Implantation Method and Device", the application number is 92113717.6, discloses that it is accomplished by applying pulse voltage to the workpiece in a closed vacuum chamber with a magnetic field added. Although this method is mature in technology and has a large applicable coverage, it is difficult to effectively monitor the vacuum degree of the equipment...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/14C23C14/54
CPCC23C14/14C23C14/48C23C14/542
Inventor 孙安范义奎张力平
Owner ANDESON SUPERCONDUCTING RF ACCELERATOR TECHCO