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Method for forming semiconductor device with feature opening

A semiconductor and component technology, applied in the field of forming semiconductor devices with component openings, can solve the problems of difficult implementation of manufacturing process and increased complexity

Active Publication Date: 2019-04-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these advances have increased the complexity of processing and manufacturing IC
[0004] Manufacturing processes continue to become more difficult due to ever-shrinking component sizes
Therefore, it becomes a challenge to form reliable semiconductor devices with smaller and smaller dimensions

Method used

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  • Method for forming semiconductor device with feature opening
  • Method for forming semiconductor device with feature opening
  • Method for forming semiconductor device with feature opening

Examples

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Embodiment Construction

[0013] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component are formed in direct contact. Additional components may be formed such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or letters in various instances. This repetition is for the sake of simplicity and clarity and does not in itself indicate a relationship between the vari...

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Abstract

A method for forming a semiconductor device structure is provided.This method includes: formation of the dielectric layer above the semiconductor substrate and the formation of a hard covering model above the dielectric layer.This method also includes the implementation of a plasma etching process to form an opening to form a stiffly covering mold layer, and the gas mixture used in the plasma etching process includes nitrogen -containing gas, halogen -containing gas and carbon -containing gases.The volume concentration of the nitrogen -containing gas of the gas mixture is within a range of about 20 % to about 30 %.The volume ratio of carbon -containing gas in the gas mixture is about 0.3.This method also includes the opening of the dielectric layer in the opening layer to form a component opening in the dielectric layer.This method also includes a conductive material in the part of the part.Examples of the present invention involve methods to form semiconductor devices with component opening.

Description

technical field [0001] Embodiments of the invention relate to methods for forming semiconductor devices having feature openings. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs. Each generation of ICs has smaller and more complex circuits than the previous generation. [0003] In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) has typically increased while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) has decreased. Often this scaling down process benefits by increasing production efficiency and reducing associated costs. However, these advances have increased the complexity of processing and manufacturing ICs. [0004] Manufacturing processes continue to become more difficult due to ever-decreasing component sizes. Ther...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/311
CPCH01L21/31144H01L21/76802H01L21/32136H01L21/76807H01L21/76811H01L2221/1063H01L21/76879H01L21/31116H01L21/02186H01L21/02126
Inventor 陈泳字陈玉树刘又诚
Owner TAIWAN SEMICON MFG CO LTD
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