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Method for preparing ultra-high hardness diamond composite material by spark plasma sintering

A technology of discharge plasma and composite materials, applied in the field of superhard materials, can solve the problems of patents and reports without ultra-high hardness diamond composite materials, and achieve the effects of short preparation period, high hardness and high density

Active Publication Date: 2018-01-12
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] According to the novelty search results of domestic and foreign patents and journals, there are no patents and reports on the preparation of ultra-high hardness diamond composite materials by spark plasma sintering

Method used

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  • Method for preparing ultra-high hardness diamond composite material by spark plasma sintering
  • Method for preparing ultra-high hardness diamond composite material by spark plasma sintering
  • Method for preparing ultra-high hardness diamond composite material by spark plasma sintering

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] like figure 1 As shown, put 4.5 grams of diamond powder into chemical vapor deposition equipment (or powder chemical vapor deposition equipment. The same below), and the particle size of diamond powder is 2 to 4 microns. The background vacuum of the chemical vapor deposition equipment is 5Pa, and the precursor of chemical vapor deposition is C 6 H 18 Si 2 (hexamethyldisilane: HMDS hexamethyldisilane), the precursor temperature was 25° C., the deposition temperature was 720° C., the deposition time was 4 hours, and the deposition pressure was 400 Pa. A silicon carbide film with a thickness of 26 nanometers is deposited on the surface of the diamond powder to obtain a silicon carbide-coated diamond composite powder, in which the mass fraction of silicon carbide is 9 mass%; the surface-modified diamond composite powder is placed in a drying oven In the process, dry at 50 °C for 1 hour to obtain diamond composite powder; mix the dried diamond composite powder with amorph...

Embodiment 2

[0037] Put 4.5 grams of diamond powder into the powder chemical vapor deposition equipment, and the particle size of the diamond powder is 2-4 microns. The background vacuum of the powder chemical vapor deposition equipment is 5Pa, and the precursor of chemical vapor deposition is C 6 H 18 Si 2(hexamethyldisilane: HMDS hexamethyldisilane), the precursor temperature is 25°C, the deposition temperature is 720°C, the deposition time is 4 hours, and the deposition pressure is 400Pa. Deposit a silicon carbide film coated with a thickness of 26 nanometers on the surface of the diamond powder to obtain a silicon carbide-coated diamond composite powder, wherein the mass fraction of silicon carbide is 9 mass%; put the surface-modified diamond composite powder into a drying box , dry at 50°C for 1 hour to obtain diamond composite powder; mix the dried diamond composite powder with amorphous silica powder at a mass ratio of 65:35, and grind and mix with a corundum mortar for 0.5 hours ...

Embodiment 3

[0040] Put 4.5 grams of diamond powder into the powder chemical vapor deposition equipment, and the particle size of the diamond powder is 2-4 microns. The background vacuum of powder chemical vapor deposition equipment is 5Pa, and the precursor of chemical vapor deposition is C 6 h 18 Si 2 (hexamethyldisilane: HMDS hexamethyldisilane), the precursor temperature is 25°C, the deposition temperature is 720°C, the deposition time is 4 hours, and the deposition pressure is 400Pa. Deposit a silicon carbide film coated with a thickness of 26 nanometers on the surface of the diamond powder to obtain a silicon carbide-coated diamond composite powder, wherein the mass fraction of silicon carbide is 9 mass%; put the surface-modified diamond composite powder into a drying box , dry at 50°C for 1 hour to obtain diamond composite powder; mix the dried diamond composite powder with amorphous silica powder at a mass ratio of 65:35, and grind and mix with a corundum mortar for 0.5 hours ;P...

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Abstract

The invention relates to a preparation method for a diamond composite material. A method for preparing a ultrahigh-hardness diamond composite material by adopting discharge plasma sintering is characterized by comprising the following steps: (1) modifying a powder surface, wherein a silicon carbide film with thickness being 0.1-50 nanometers is deposited and coated on the surface of the diamond powder; (2) drying; (3) adding a sintering aid: mixing the sintering aid with an amorphous-state silicon dioxide powder, and grinding to obtain composite powder; (4) discharge plasma sintering: carrying out discharge plasma sintering for 10-30 minutes at a temperature of 1400-1700 DEG C under sintering pressure of 30-100MPa, thereby obtaining a composite material; and (5) de-molding and polishing the composite material to obtain the ultrahigh-hardness diamond composite material. The obtained high-hardness diamond composite material has the best hardness which can be up to 36 GPa. According to the method, the sintering pressure is low, and 100 MPa sintering pressure accounts for 2 percent of normal diamond preparation pressure (higher than 5GPa). The diamond composite material prepared by the method is high in compactness and is high in hardness.

Description

technical field [0001] The invention relates to a superhard material and a method for preparing a diamond composite material. Background technique [0002] Diamond is the hardest material in nature, and it is widely used in cutting tools, oil extraction, fine machining, etc. Due to the limitation of size and quantity of natural diamond, the cost is extremely high, and the preparation of polycrystalline diamond is an urgent hot demand in the industry. [0003] In the crystal structure of diamond, each carbon atom forms a covalent bond with another 4 carbon atoms with an SP3 hybrid orbital, forming a regular tetrahedron. The carbon-carbon covalent bond in diamond is very strong, which determines that diamond has a high melting point and a low diffusion coefficient. Due to the low diffusion coefficient of diamond and the graphitization phase transition at high temperature, the preparation of pure phase diamond usually requires high temperature (above 1500 degrees Celsius) and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/52C04B35/645C04B35/628
CPCC04B35/52C04B35/62839C04B35/645C04B2235/3418C04B2235/3826C04B2235/5436C04B2235/5454
Inventor 贺振华周建後藤孝
Owner WUHAN UNIV OF TECH