Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for fluorinating insulator through use of CF4 plasma

A plasma and insulator technology, which is applied in the field of plasma fluorinated insulators, achieves the effects of simple and fast processing, improved contact angle and low toxicity

Inactive Publication Date: 2016-07-13
XI AN JIAOTONG UNIV
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Plasma surface modification technology is currently mainly used to improve the hydrophilicity (repellency), printability, roughness, surface energy, etc. of materials, and the field of using plasma technology to improve the flashover characteristics of fluorinated insulators is rare. There are reports

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for fluorinating insulator through use of CF4 plasma
  • Method for fluorinating insulator through use of CF4 plasma
  • Method for fluorinating insulator through use of CF4 plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] 1) At room temperature, put the pot insulator sample (the main component is epoxy resin) into a closed reaction chamber, and then vacuumize the reactor to a pressure of less than 10 -2 Pa;

[0031] 2) Fill CF into the reaction chamber 4 Mixed gas with argon until the pressure in the cavity reaches 0.1atm, and the concentration of CF4 is 10%;

[0032] 3) Apply high voltage to the electrodes in the reaction chamber to generate plasma and process the insulator sample for 5 minutes;

[0033] 4) After the reaction, the gas in the reaction chamber was fully replaced with nitrogen, and the insulator samples were taken out to test the flashover voltage and surface contact angle.

Embodiment 2

[0035] 1) At room temperature, put the silicone rubber insulator into a closed reaction chamber, and then vacuumize the reactor to a pressure of less than 10 -2 Pa;

[0036] 2) Fill CF into the reaction chamber 4 Mixed gas with argon until the pressure in the cavity reaches 0.1atm, and the concentration of CF4 is 10%;

[0037] 3) Apply high voltage to the electrodes in the reaction chamber to generate plasma and process the insulator sample for 10 minutes;

[0038] 4) After the reaction, the gas in the reaction chamber was fully replaced with nitrogen, and the insulator samples were taken out to test the flashover voltage and surface contact angle.

Embodiment 3

[0040] 1) At room temperature, put the alumina ceramic insulator into a closed reaction chamber, and then vacuumize the reactor to a pressure of less than 10 -2 Pa;

[0041] 2) Fill CF into the reaction chamber 4 Mixed gas with argon until the pressure in the cavity reaches 0.1atm, and the concentration of CF4 is 10%;

[0042] 3) Apply high voltage to the electrodes in the reaction chamber to generate plasma and process the insulator sample for 8 minutes;

[0043] 4) After the reaction, the gas in the reaction chamber was fully replaced with nitrogen, and the insulator samples were taken out to test the flashover voltage and surface contact angle.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of high voltage and insulation, and specifically relates to a method for fluorinating an insulator through use of a CF4 plasma. According to the method, an insulator is put in a reaction cavity, a mixture of CF4 and an inert gas is fed into the reaction cavity, the insulator is processed by a discharge plasma for 2-30min at room temperature and at low pressure of 0.01-0.1atm, so CF4 and the surface of the insulator are reacted with each other to generate a fluorinated layer. The method has the characteristic that the surface of a insulator is fluorinated through plasma processing in CF4, the surface flashover characteristic of insulators is improved, the electric strength of insulators is improved, the flashover voltage can be improved by about 50% to the maximum, the hydrophobic and oleophobic properties of the surfaces of insulators are improved, and the capability of insulators to prevent wet flashover and pollution flashover is improved.

Description

Technical field: [0001] The invention belongs to the technical field of high voltage and insulation, in particular to a CF 4 Method for plasma fluorination of insulators. Background technique: [0002] Insulators have the functions of electrical insulation and mechanical fixation in the power system. They can mechanically connect conductors with different potentials or conductors and the earth, and electrically insulate each other. Due to the flashover phenomenon along the surface of the insulator, its withstand voltage strength is much lower than its bulk breakdown voltage, which seriously restricts the withstand voltage capability of high-voltage equipment and affects the normal operation of the equipment. Therefore, how to improve the flashover characteristics of insulators has become a concern. In recent years, the technology of using gas fluorination technology to treat the surface of insulators can better improve the flashover voltage of the insulator surface; howeve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B19/04
CPCH01B19/04
Inventor 张冠军陈思乐常正实李平许桂敏姚聪伟
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com