Unlock instant, AI-driven research and patent intelligence for your innovation.

Multilayer structure pixel based on external S-shaped wire and image sensor

A multi-layer structure and outward-looking technology, applied in the field of image sensors, can solve problems such as poor processing accuracy, index drop, and poor material coating, and achieve the effects of expanding the receiving area, reducing distortion, and improving receiving sensitivity

Active Publication Date: 2016-07-13
XINFOO SENSOR TECH CO LTD
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, poor material coating (thickness, uniformity) or poor processing precision of MEMS will cause the index to drop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multilayer structure pixel based on external S-shaped wire and image sensor
  • Multilayer structure pixel based on external S-shaped wire and image sensor
  • Multilayer structure pixel based on external S-shaped wire and image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0023] Today, dislocation augmentation is a new technology applied to next-generation image sensors. Its core advantage is that the resolution is greatly improved under the premise of the same physical space and the same pixel size. If a new three-dimensional structure is added on this basis, the absorption area can be better increased, and the receiving intensity of the photoelectric signal can be increased and the receiving sensitivity can be improved by co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of image sensors, in particular to a multilayer structure pixel based on an external S-shaped wire, a pixel array and an image sensor.The multilayer structure pixel comprises a substrate and a micro-bridge.The micro-bridge comprises a first layer of piers used for supporting the micro-bridge, a bridge floor arranged on the first layer of piers and a second layer of piers.S-shaped wiring is adopted between the two layers of piers, and the S-shaped wire is externally arranged at the bottoms of adjacent pixel bodies.A photosensitive layer is arranged on the surface of the bridge floor and used for absorbing electromagnetic waves, the upper surface of the photosensitive layer comprises an insulating layer, and a plurality of hollow stereo structures are arranged on the surface of the photosensitive layer.According to the multilayer structure pixel, through the hollow stereo structures with the surfaces coated with graphene or other novel materials and the external S-shaped wire, the distortion of signals in the transmission process is reduced, the receiving area is increased under the condition that space is kept unchanged, the receiving flexibility is improved, and compared with common pixels, the receiving flexibility is effectively improved by 30% or above; besides, the multilayer structure pixel is simple in process and suitable for large-scale production.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a multilayer structure pixel and an image sensor based on outward S-shaped wires. Background technique [0002] Dislocation imaging is a new technology applied to the next generation of image sensors. Image sensors using dislocation imaging can be widely used in near-infrared, visible light, ultraviolet, X-ray, microwave, THZ, far-infrared and other spectrums. Its core advantage is in Under the premise of the same physical space and the same pixel size, the resolution is greatly improved. [0003] In the prior art, poor material coating (thickness, uniformity) or poor processing precision of MEMS will cause the index to drop. [0004] Therefore, if a new three-dimensional structure is added on the basis of this technology, the absorption area can be increased, and new materials can be coated at the same time, which will help increase the receiving intensity of photoelectri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/14636
Inventor 赵照
Owner XINFOO SENSOR TECH CO LTD