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Composite anode, QLED device, and preparation methods thereof

A composite anode and device technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve problems such as large leakage current and uneven edges of the anode surface, and achieve the goal of reducing leakage current and improving QLED performance. Effect

Inactive Publication Date: 2016-07-13
TCL CORPORATION
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a composite anode, a QLED device and a preparation method thereof, aiming to solve the problem in the prior art that a large amount of leakage current is caused by the uneven surface or edge of the anode

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  • Composite anode, QLED device, and preparation methods thereof
  • Composite anode, QLED device, and preparation methods thereof
  • Composite anode, QLED device, and preparation methods thereof

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Embodiment Construction

[0034] The present invention provides a composite anode, a QLED device and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0035] Such as figure 2 Shown, the preferred embodiment of the preparation method of a kind of composite anode provided by the present invention, it comprises steps:

[0036] S1, spin-coat PMMA solution on the substrate, and dry;

[0037] S2, then drop the AgNWs solution on the PMMA surface, and make the AgNWs solution evenly spread on the PMMA surface, and then dry;

[0038] S3, spin coating a layer of CPI on the surface of AgNWs, and then perform curing treatment;

[0039] S4, then peel off the PMMA to form AgNWs-CPI composite anode.

[0040] Spec...

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Abstract

The invention discloses a composite anode, a QLED device, and preparation methods thereof. The preparation method for a composite anode comprises: step A, PMMA solution spinning is carried out on a substrate and drying is carried out; step B, a AgNWs solution is dripped on the PMMA surface and the AgNWs solution is spread uniformly on the PMMA surface, and then drying is carried out; step C, CPI spinning is carried out on the AgNWs surface and then solidification is carried out; and step D, PMMA peeling is carried out to form a AgNWs-CPI composite anode. According to the invention, because the CPI spinning is carried out on the AgNWs surface, the AgNWs is embedded into the CPI, so that the smooth AgNWs-CPI composite anode structure is obtained; and thus the leak current is reduced and the QLED performance is enhanced. Besides, the prepared AgNWs-CPI composite anode has certain flexibility and has the proper bending performance.

Description

technical field [0001] The invention relates to the technical field of light-emitting display, in particular to a composite anode, a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have attracted extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, and easy processing. After years of development, QLED technology has achieved tremendous development. [0003] Such as figure 1 As shown, QLED is usually prepared with ITO substrate as a carrier, which includes from bottom to top: glass 10, ITO anode 20, hole transport layer (HTL) 30, quantum dot light emitting layer (QD) 40, electron transport layer ( ETL) 50, cathode (Al) 60, because the surface or edge of the ITO anode 20 is uneven, and the distance between the cathode and the anode is small, the uneven position of the surface or ...

Claims

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Application Information

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IPC IPC(8): H01L51/56H01L51/52H01L51/50
CPCH10K50/115H10K50/81H10K71/00
Inventor 刘佳曹蔚然杨一行钱磊
Owner TCL CORPORATION