Mgb2-based superconductor with increased critical transition temperature excited by electroluminescence and preparation method thereof

A critical transition temperature, electroluminescence technology, applied in cable/conductor manufacturing, usage of superconducting elements, superconducting/high-conducting conductors, etc. drop etc.

Inactive Publication Date: 2018-04-13
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

MgB 2 Although it has many advantages, the low superconducting critical transition temperature limits its application. People hope to increase its superconducting transition temperature through various means, among which chemical doping is one of the most used methods.
However, a large number of research results have shown that many chemical dopants make MgB 2 T of superconductor c decreased because MgB 2 Lattice doping of materials is not easy to achieve
On the other hand, chemical doping will affect physical properties such as electronic structure and lattice constant, which may reduce the phonon frequency and lead to a decrease in the electric-acoustic coupling strength, which may reduce the MgB 2 the T c
In addition, it is also a means to increase the superconducting critical transition temperature by exciting the superconductor with an external light field, but the experimental results are generally unsatisfactory, and the effect is not obvious or the duration of the effect is very short.

Method used

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  • Mgb2-based superconductor with increased critical transition temperature excited by electroluminescence and preparation method thereof
  • Mgb2-based superconductor with increased critical transition temperature excited by electroluminescence and preparation method thereof
  • Mgb2-based superconductor with increased critical transition temperature excited by electroluminescence and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0028] (1) Preparation of Y by hydrothermal method 2 o 3 and Y 2 o 3 :Eu 3+ Nanorods: The preparation flow chart is as follows figure 1 shown.

[0029] (2) Preparation of pure MgB by ex-situ solid-phase doping method 2 , Y 2 o 3 and Y 2 o 3 :Eu 3+ Emitter-doped MgB 2 Superconductor (1% by mass fraction).

[0030] (3) MgB prepared by ex-situ doping using a Japanese JSM-7000F scanning electron microscope 2 Morphological characterization of base superconductors, such as Figure 4 shown. From Figure 4 It can be seen in MgB 2 The size of the matrix particles is about 1-3 μm, the size and shape are irregular, and there are gaps between the particles; the lighter part in the picture is the rod-shaped Y 2 o 3 :Eu 3+ The luminous body is mostly distributed in the gaps between the particles, and the distribution is relatively uniform. Y 2 o 3 :Eu 3+ The morphology of nanorods has not changed much compared with that before doping.

[0031] (4) The X'Pert MPD PRO ...

Embodiment 2

[0033] (1) Preparation of Y by hydrothermal method 2 o 3 and Y 2 o 3 :Eu 3+ Nanorods: The preparation flow chart is as follows figure 1 shown.

[0034] (2) Preparation of pure MgB by ex-situ solid-phase doping method 2 , Y 2 o 3 and Y 2 o 3 :Eu 3+ Emitter-doped MgB 2 Superconductor (2% mass fraction).

[0035] (3) The X'Pert MPD PRO X-ray diffractometer of PANalytical Company in the Netherlands was used to analyze the phase of the sample; the liquid helium cryogenic system of Advanced Research Systems in the United States was used to measure the change of sample resistance with temperature by using the four-probe method The curve: as shown in Figure 6. From Figure 6.a As can be seen, Y 2 o 3 and Y 2 o 3 :Eu 3+ Emitter-doped MgB 2 The main phase of the superconductor sample is MgB 2 , in addition to some retained Y 2 o 3 phase, the source of the impurity phase MgO is as described in Example 1. From Figure 6.b It can be seen that with the increase of ...

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Abstract

The invention relates to an MgB2-based superconductor with increased critical transition temperature through electroluminescent excitation and a preparation method thereof. The critical transition temperature of the MgB2-based superconductor is changed through ectopic doping of Y2O3:Eu<3+> luminous bodies. Two doping agents of different luminous intensity, namely, Y2O3:Eu<3+>I and Y2O3:Eu<3+>II nano-rods, are prepared through a hydrothermal method, and an MgB2-based superconductor doped with Y2O3:Eu<3+> luminous bodies is prepared through an ectopic doping method. The mass fraction of the Y2O3:Eu<3+> luminous bodies is 1% and 2%. As the luminous intensities of the doping agents increase, the Tc value of the MgB2-based superconductor increases constantly. In the absence of an external magnetic field, when the Y2O3:Eu<3+>II luminous body of high luminous intensity is used as the doping agent and the doping concentration is 2%, Tc of the MgB2-based superconductor is 35.9K, which is higher than Tc (35.8K) of pure MgB2.

Description

technical field [0001] The present invention relates to a kind of MgB 2 A base superconductor and a method for preparing the superconductor, the superconductor has excellent characteristics, such as a relatively high critical transition temperature, and is easy to prepare. Background technique [0002] In 2001, Japanese scientists discovered a new type of binary compound superconducting material MgB 2 , whose T c The highest is 39K, which is the highest superconducting transition temperature in the low-temperature superconducting family. This is another major scientific discovery following the discovery of copper oxide high-temperature superconductors. Studies have shown that: MgB 2 It has relatively high critical temperature, low anisotropy, large coherence length, high critical current density and large upper critical magnetic field, double energy gap (larger energy gap), and the current is not affected by grain boundary connectivity Limitation (no need for high textu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B12/00H01B12/02H01B12/04H01B13/00C04B35/58C01B35/04B82Y40/00
CPCB82Y40/00C01B35/04C04B35/58057H01B12/00H01B12/02H01B12/04H01B13/00Y02E40/60
Inventor 赵晓鹏陶硕李勇波陈国维
Owner NORTHWESTERN POLYTECHNICAL UNIV
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