Graphene transparent conductive film and preparation method thereof

A technology of transparent conductive film and graphene, which is applied in the manufacture of cables/conductors, conductive materials dispersed in non-conductive inorganic materials, circuits, etc., can solve the problems of scarce indium content, complex production process, and high cost, and achieve improvement and stability The effect of sex and conductivity

Active Publication Date: 2016-07-20
刘果
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the mainstream transparent conductive film material is indium tin oxide (ITO) film, but ITO film has some shortcomings, mainly reflected in the scarcity of indium in the earth's crust, complex production process, high price and high cost, and is gradually being replaced.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] A preparation method of a transparent conductive film with high light transmittance and low surface resistance, specifically:

[0056] Step (1), prepare graphene: add flake graphite to 2mol / L strong oxidizing acid, stir, add strong oxidant, stir at 50°C for 1.5h, cool to room temperature, dilute, centrifuge, freeze, and dry Graphene oxide is produced.

[0057] In step (2), add 10g of graphene oxide and 14g of silane coupling agent KH55014 into dry DMF, stir well, react at 40°C for 12h, cool to room temperature, filter, wash with dry DMF, and dry to constant weight.

[0058] In step (3), add 5g of surface-modified graphene into 50ml of DMF to disperse uniformly by ultrasonic, then add 100g of terephthalic acid, 35g of ethylene glycol, 1g of catalyst antimony trioxide and stabilizer triphenyl phosphate 2g of ester was stirred and mixed evenly, and the pressure was reduced to 10 2 pa, at the same time, heat up to 280°C for polycondensation, and polyester PET chips are ...

Embodiment 2

[0062] A preparation method of a transparent conductive film with high light transmittance and low surface resistance, specifically:

[0063] Step (1), step (1), prepare graphene: Add flake graphite to 2mol / L strong oxidizing acid, stir, add strong oxidant, stir at 50°C for 1.5h, cool to room temperature and dilute , centrifugation, freezing and drying to obtain graphene oxide.

[0064] In step (2), add 10 g of graphene oxide and 14 g of silane coupling agent γ-glycidyl etheroxypropyl trimethoxysilane into dry DMF, stir well, react at 40°C for 12 hours, cool to room temperature, filter, and use Wash with dry DMF and dry to constant weight.

[0065] In step (3), add 5g of surface-modified graphene into 50ml of DMF to disperse uniformly by ultrasonic, then add 100g of terephthalic acid, 35g of ethylene glycol, 1g of catalyst antimony trioxide and stabilizer triphenyl phosphate 2g of ester was stirred and mixed evenly, and the pressure was reduced to 10 2 pa, at the same t...

Embodiment 3

[0069] A preparation method of a transparent conductive film with high light transmittance and low surface resistance, specifically:

[0070] Step (1), prepare graphene: add flake graphite to 2mol / L strong oxidizing acid, stir, add strong oxidant, stir at 50°C for 1.5h, cool to room temperature, dilute, centrifuge, freeze, and dry Graphene oxide is produced.

[0071] In step (2), add 10 g of graphene oxide and 14 g of silane coupling agent γ-glycidyl etheroxypropyl trimethoxysilane into dry DMF, stir well, react at 40°C for 12 hours, cool to room temperature, filter, and use Wash with dry DMF and dry to constant weight.

[0072] In step (3), add 5g of surface-modified graphene into 50ml of DMF to disperse uniformly by ultrasonic, then add 100g of terephthalic acid, 35g of ethylene glycol, 1g of catalyst antimony trioxide and stabilizer triphenyl phosphate 2g of ester was stirred and mixed evenly, and the pressure was reduced to 10 2 pa, at the same time, heat up to 280°C fo...

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Abstract

The invention provides a preparation method for a transparent conductive film with high light transmission and low area resistance. The preparation method comprises the following steps of (1) preparing graphene oxide; (2) carrying out surface modification on the prepared graphene oxide by a silane coupling agent; (3) uniformly stirring and mixing the graphene subjected to surface modification with terephthalic acid, ethylene glycol, a catalyst and a stabilizer in an organic solvent, carrying out pressure reduction, temperature rise and condensation polymerization, discharging the product to obtain a modified polyester PET slice, wherein after the slice prepares a casting, a graphene modified PET film is prepared through bidirectional stretching; (4) carrying out ultrasonic mixing on a graphene aqueous solution, a nano-metal aqueous solution and an ATO solution / ITO solution, adding a dispersing agent and macromolecule resin during the process, and taking supernatant after centrifugal separation, thereby obtaining a composite conductive coating; and (5) coating the composite conductive coating obtained in the step (4) onto the surface of the graphene modified PET film obtained in the step (3) to obtain the transparent conductive film.

Description

technical field [0001] The invention relates to a graphene transparent conductive film and a preparation method thereof. Background technique [0002] With the rapid development of the electronics industry, the integration of electronic circuit boards is getting higher and higher. The high density of electronic components on the motherboard, the compact wiring, and even the widespread use of surface mount components can easily lead to electrostatic damage to circuit boards. . When an American agency tested the integrated circuits in a large-scale communication system equipment, it was found that one-third of the faulty integrated circuits were broken down by electrostatic discharge. Packaging products with antistatic film can prevent static electricity from damaging integrated circuits. [0003] At present, the mainstream transparent conductive film material is indium tin oxide (ITO) film, but ITO film has some shortcomings, mainly reflected in the scarcity of indium in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/24H01B1/02H01B1/04H01B1/08
Inventor 刘畅刘果刘英博
Owner 刘果
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