Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A semiconductor and conductive technology, applied in the direction of semiconductor devices, transistors, electric solid devices, etc., can solve the problems of inability to maintain high-frequency switching circuits to allow input power, disconnection withstand voltage reduction, etc.

Active Publication Date: 2018-11-09
KK TOSHIBA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Therefore, when the MISFET is applied to a switching element of a high-frequency switching circuit, and the thickness of the gate insulating film is reduced in order to reduce the insertion loss of high-frequency signals, the off withstand voltage decreases due to GIDL.
Therefore, there is a problem that the allowable input power of the high-frequency switching circuit cannot be maintained.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] Hereinafter, embodiments of the present invention will be described with reference to the drawings. This embodiment does not limit the present invention.

[0017] figure 1 It is a block diagram showing an example of the configuration of the antenna switching device 1 and its periphery according to the present embodiment. The antenna switching device 1 includes a switching unit SW, a control unit CNT, and an interface unit INT. In addition, the antenna switching device 1 may be a semiconductor integrated circuit device provided as a single semiconductor chip on an SOI (Silicon On Insulator: silicon on insulator) substrate.

[0018] The interface unit INT receives serial data used for generating the control signal Scnt from an input terminal, and converts the serial data into parallel data (switching signal). Therefore, the interface unit INT has a serial / parallel conversion circuit, and is composed of a highly integrated digital LSI (Large Scale Integration) capable o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device according to an embodiment switches high-frequency signals and includes a semiconductor layer of a first conductivity type. A first layer of a second conductivity type is provided in the semiconductor layer. A second layer of the second conductivity type is provided in the semiconductor layer. A gate dielectric film is provided on the semiconductor layer, the first layer and the second layer. A gate electrode is provided on the gate dielectric film. The gate dielectric film includes a first portion and the semiconductor layer, and a second portion located at both side of the first portion-in a gate length direction of the gate electrode and being thicker than the first portion. At least a part of the second portion is located between the gate electrode and the first layer and between the gate electrode and the second layer.

Description

[0001] Associate application [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2015-005357 (filing date: January 14, 2015). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to semiconductor devices. Background technique [0004] Electronic devices such as portable devices include a high-frequency circuit that connects a transmission circuit or a reception circuit to an antenna. The high-frequency circuit has a high-frequency switching circuit for selectively connecting the transmission circuit or the reception circuit to the antenna. HEMTs (High Electron Mobility Transistors) using GaAs are frequently used as switching elements in high-frequency switching circuits. However, in recent years, applications of MISFETs (Metal Insulator Semiconductor Field Effect Transistors) using Si ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423H01L29/06H01L27/12
CPCH01L29/42368H01L29/0649H01L29/0684H01L29/42376H01L29/4983H01L29/6656H01L29/78H01L29/7833H03K17/063
Inventor 西堀一弥中川贵博
Owner KK TOSHIBA