Plasma processor processor having continuously adjustable dielectric parameters

Abstract

A plasma processor processor having continuously adjustable dielectric parameters is disclosed. The plasma processor comprises a reaction chamber, a reactant gas intake device positioned on the top part of the reaction chamber, and a pedestal positioned below the reaction chamber, wherein the pedestal is used for fixing a substrate, a radio frequency power source is connected to an electrode in the pedestal, a substrate fixing device is arranged on the pedestal, the substrate is fixed above the substrate fixing device, and an edge ring surrounds the substrate fixing device and is positioned above the electrode. The edge ring is characterized in that the edge ring comprises a hollow annular pipeline, the internal part of an outer wall of the annular pipeline includes a plurality of telescopic flexible pipes that are arranged in an up and down manner or an inside and outside manner, the plurality of telescopic flexible pipes are connected with a dielectric medium fluid supply system via dielectric medium fluid input and output pipelines, and space ratios of different soft pipes to the inner space of the annular pipeline change when the dielectric medium fluid supply system controls change of hydraulic pressure flowing into different soft pipes.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a plasma processor with continuously adjustable dielectric parameters. Background technique [0002] Such as figure 1 As shown, the conventional plasma processing apparatus includes a reaction chamber 100, the reaction chamber includes a base 102, and the base includes a lower electrode. An electrostatic chuck 34 is included above the susceptor, and the substrate 30 to be processed is disposed on the electrostatic chuck. A radio frequency power supply is connected to the lower electrode inside the base 102 through a matcher. Exhaust passages 20 are included around the outside of the susceptor to maintain low air pressure within the plasma processing apparatus. The top of the reaction chamber opposite to the base also includes a gas shower head 60 connected to the gas source 50 through a valve. The gas shower head is also used as the upper electrode to capac...

AI Technical Summary

Problems solved by technology

Although this method can adjust the dielectric constant of the edge ring to a certain extent, there are still many problems: the dielectric liquid first fills the space below the hollow pipe and then expands upward, so when a state with a lower dielectric constant is required It is basically empty, that is, the distribution of dielectric constant in the upper and lower directions in the pipe is uneven; the temperature of the edge ring will increase during plasma treatment, and the volume of liquid and gas in the hollow ring will expand with temperature changes, requiring high Only a high-precision measurement and control system can ensure accurate control of the liquid level of the dielectric liquid, so it is basically impossible to accurately control the dielectric constant; the dielectric liquid can only be of a single type, and multiple dielectric liquids will be mixed. Once mixed, it is difficult to control the next time Separated again, so the adjustment range of the dielectric constant that can be achieved by a single dielectric liquid is limited

In addition, the structural design in the comparative technology makes the dielectric liquid in the pipeline static and unable to flow, so it cannot take away the heat generated during long-term operation

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