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Removal method for photoetching coating on carbon-containing porous material substrate

A porous material and coating technology, applied in the field of photolithographic coating removal, can solve problems such as substrate damage, and achieve the effects of increasing removal capacity, overcoming slow removal speed, and convenient processing.

Active Publication Date: 2016-08-10
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, when the substrate is a carbon-containing porous material, such as a low-k material, the high-temperature oxidation process will cause greater damage to the substrate while removing the photolithographic coating

Method used

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  • Removal method for photoetching coating on carbon-containing porous material substrate

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Embodiment Construction

[0020] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0021] like figure 1 Shown, a kind of removal method for the photolithography coating of carbonaceous porous material substrate comprises the steps:

[0022] Step 1, using an organic solvent to remove the photoresist coating on the substrate surface and deep holes; the photoresist coating includes a photoresist coating and an antireflection coating.

[0023] The specific implementation of the step 1 is, at room temperature, the organic solvent is sprayed onto the substrate surface, and the organic solvent is evenly covered on the substrate surface by rotating the substrate, and the photoresist coating on the substrate surface and deep holes is dissolved in the organic solvent. After the solvent is removed, the orga...

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Abstract

The invention relates to a removal method for a photoetching coating on a carbon-containing porous material substrate. In the invention, organic solvent removal and low-temperature oxidizing removal are combined, wherein the photoetching coating, which is easy to dissolve in the organic solvent, on the surface and in deep pores of the substrate is removed firstly by an organic solvent, and then the residual photoetching coating in the deep pores is removed through the low-temperature oxidizing process. The method effectively overcomes the defects of incomplete removal with the organic solvent and low removal speed and low capability of the low-temperature oxidizing process, increases removal capability on the photoetching coating, can completely remove the photoetching coating, and ensures structural performance and electrical performance of porous structures in the carbon-containing porous material substrate, thereby providing convenience for subsequent processes.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for removing a photolithography coating on a carbon-containing porous material substrate. Background technique [0002] In the integrated circuit manufacturing process, the most commonly used method for removing the photolithographic coating is a high-temperature ashing process, generally using an oxidation treatment at a temperature higher than 250°C. However, when the substrate is a carbon-containing porous material, such as a low-k material, the high-temperature oxidation process will cause greater damage to the substrate while removing the photolithographic coating. Contents of the invention [0003] The purpose of the present invention is to provide a method for removing a photolithographic coating on a carbon-containing porous material substrate to solve the above-mentioned problems in the prior art. [0004] The technical scheme that th...

Claims

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Application Information

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IPC IPC(8): G03F7/42
CPCG03F7/42
Inventor 刘天建王华
Owner WUHAN XINXIN SEMICON MFG CO LTD
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