High-purity fine-grained nickel metal hot extrusion rotating target

Abstract

The invention discloses a high-purity fine-grain metallic nickel hot extrusion rotating target material. A production process mainly comprises the steps that raw material nickel is smelted into a high-purity nickel ingot through vacuum electron beams; the nickel ingot is heated; the heated nickel ingot is directly extruded; the extruded nickel target is subjected to annealing treatment; and finally, the annealed nickel target is subjected to necessary machining to be prepared into the required rotating target material. The obtained target material is small in crystalline grain, high in purity and uniform in internal structure; the use ratio of the target material is remarkably increased, the process is simple, and the production cost is low; and thus, a high-quality thin film which is high in magnetic permeability, good in magnetic performance, small in thickness and uniform is obtained advantageously, and the semiconductor sputtering process requirements are met.

Description

technical field [0001] The invention relates to the coating technology of C23C sputtering method in IPC classification, belongs to the field of target material processing, in particular to high-purity fine-grained metal nickel hot extrusion rotating target material. Background technique [0002] In the fields of semiconductor, magnetic recording, flat panel display, etc., the demand and quality requirements for metal targets are increasing day by day. The finer the grains of the metal target, the more uniform the composition structure, the smaller the surface roughness, the thinner the formed film will be. uniform. [0003] Nickel has a face-centered cubic structure. In addition to the atoms on the top corners of this structure, there are 6 atoms in the center of the six faces of the unit cell cube, so it is called face-centered cubic. For this structure, translating the face centered cubic structure along the diagonals of the faces, it can be shown that the same is true ar...

AI Technical Summary

Problems solved by technology

[0006] At present, due to process limitations and material purity limitations as described above, most of the nickel targets for semiconductors commonly prepared in the prior art are planar targets. This type of metal nickel planar target needs to be prepared by hot rolling, cold rolling and annealing processes. , often due to the stress of the material is prone to cracks, resulting in waste of material

[0007] No relevant improved technical solutions have been found in the published patent literature