Method for removing photoresist on graphene
A photoresist and graphene technology, applied in the field of microelectronics, can solve problems such as damage and difficulty in removing graphene, and achieve the effects of avoiding damage, stable properties, and convenient removal.
Inactive Publication Date: 2016-08-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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- Application Information
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Problems solved by technology
[0005] In view of the prior art described above, the object of the present invention is to provide a method for removing the photoresist on graphene, which is used to solve the problem of graphene damage when the photoresist on graphene is difficult to remove or deglue in the prior art. question
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[0029] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.
[0030] It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the compo...
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Abstract
The invention provides a method for removing a photoresist on graphene. The method comprises the following steps: providing a substrate with the graphene on the surface; forming a silicon nitride layer on the graphene; coating the silicon nitride layer with the photoresist and carrying out subsequent process treatment of requiring the photoresist; soaking the silicon nitride layer with acetone to remove partial photoresist; and soaking the silicon nitride layer with a hydrofluoric acid to remove the silicon nitride layer and the rest photoresist. By the method provided by the invention, the silicon nitride layer is inserted between the graphene and the photoresist, and the silicon nitride layer is removed by the hydrofluoric acid, so that the difficult-to-remove photoresist can be effectively taken away by removing the silicon nitride layer. The inserted silicon nitride layer does not affect subsequent photoresist taking technology, is easy to corrode and convenient to remove; an adverse effect on the graphene is not generated; and the damage to the graphene caused by traditional dispensing treatment is avoided.
Description
technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for removing photoresist on graphene. Background technique [0002] Graphene is a two-dimensional structure crystal composed of carbon atoms. Due to its unique electrical properties such as extremely low resistivity and high electron mobility, it is expected to be used to develop a new generation of electronic components that are thinner and conduct electricity faster. or transistors. The research on the device manufacturing process suitable for graphene will be beneficial to the practical application of graphene in various micro-nano electronic devices. [0003] At present, the removal of photoresist on graphene mainly adopts acetone immersion in the world. When the photoresist has not undergone any treatment, this method can quickly and effectively remove the photoresist, but photolithography is often accompanied by processes such as metal growth, etching or...
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Login to View More IPC IPC(8): H01L21/311H01L21/02
CPCH01L21/31111H01L21/0217H01L21/31133
Inventor 狄增峰贾鹏飞薛忠营郑晓虎王刚马骏张苗王曦
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI