Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus

A technology for models, substrates, applied in the field of structures and devices for measuring structures on substrates, models for error correction, computer program products for implementing such devices, and capable of solving difficult to find computational accuracy and usability issues

Active Publication Date: 2016-08-24
ASML NETHERLANDS BV
View PDF9 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Such nasty parameters make it difficult to find an appropriate compromise between accuracy and practicality of calculations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus
  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus
  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] figure 1A lithographic apparatus LA is schematically depicted. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or DUV radiation); a patterning device support or support structure (e.g., a mask table) MT configured to support patterning The device (e.g., mask) MA is connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; the substrate table (e.g., wafer table) WT is configured to hold a substrate (e.g., , a resist-coated wafer) W and is connected to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to position The pattern imparted to the radiation beam B by the patterning device MA is projected onto a target portion C of the substrate W (eg, comprising one or more dies).

[0039] The illum...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A reconstruction process includes measuring structures formed on a substrate by a lithographic process, determining a reconstruction model for generating modeled patterns, computing and minimizing a multi- variable cost function including model errors. Errors induced by nuisance parameters are modeled based on statistical description of the nuisance parameters' behavior, described by probability density functions. From the statistical description model errors are calculated expressed in terms of average model errors and weighing matrices. These are used to modify the cost function so as to reduce the influence of the nuisance parameters in the reconstruction, without increasing the complexity of the reconstruction model. The nuisance parameters may be parameters of the modeled structure, and / or parameters of an inspection apparatus used in the reconstruction.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of European application 13195846 filed on 05 December 2013, the entire content of which application is hereby incorporated by reference. technical field [0003] The invention relates to methods and devices for measuring structures on substrates and models for error correction. The invention can be applied, for example, in model-based metrology of microstructures, for example to assess the critical dimension (CD) or overlay performance of a lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. Photolithographic equipment may be used, for example, in the manufacture of integrated circuits (ICs). In such cases, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01B11/24G01N21/47G01N21/956
CPCG03F7/705G03F7/70625G01B2210/56G03F7/70633G03F1/44G01B11/272
Inventor M·P·敏克J·M·布鲁克I·塞蒂加
Owner ASML NETHERLANDS BV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com