Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus

A technology for models, substrates, applied in the field of structures and devices for measuring structures on substrates, models for error correction, computer program products for implementing such devices, and capable of solving difficult to find computational accuracy and usability issues

Active Publication Date: 2016-08-24
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Such nasty parameters make it difficult to find an appropriate compromise between accuracy and practicality of calculations

Method used

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  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus
  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus
  • Method and apparatus for measuring a structure on a substrate, models for error correction, computer program products for implementing such methods & apparatus

Examples

Experimental program
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Embodiment Construction

[0038] figure 1A lithographic apparatus LA is schematically depicted. The apparatus comprises: an illumination system (illuminator) IL configured to condition a radiation beam B (e.g., UV radiation or DUV radiation); a patterning device support or support structure (e.g., a mask table) MT configured to support patterning The device (e.g., mask) MA is connected to a first positioner PM configured to accurately position the patterning device according to certain parameters; the substrate table (e.g., wafer table) WT is configured to hold a substrate (e.g., , a resist-coated wafer) W and is connected to a second positioner PW configured to accurately position the substrate according to certain parameters; and a projection system (e.g., a refractive projection lens system) PS configured to position The pattern imparted to the radiation beam B by the patterning device MA is projected onto a target portion C of the substrate W (eg, comprising one or more dies).

[0039] The illum...

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PUM

PropertyMeasurementUnit
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Abstract

A reconstruction process includes measuring structures formed on a substrate by a lithographic process, determining a reconstruction model for generating modeled patterns, computing and minimizing a multi- variable cost function including model errors. Errors induced by nuisance parameters are modeled based on statistical description of the nuisance parameters' behavior, described by probability density functions. From the statistical description model errors are calculated expressed in terms of average model errors and weighing matrices. These are used to modify the cost function so as to reduce the influence of the nuisance parameters in the reconstruction, without increasing the complexity of the reconstruction model. The nuisance parameters may be parameters of the modeled structure, and / or parameters of an inspection apparatus used in the reconstruction.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of European application 13195846 filed on 05 December 2013, the entire content of which application is hereby incorporated by reference. technical field [0003] The invention relates to methods and devices for measuring structures on substrates and models for error correction. The invention can be applied, for example, in model-based metrology of microstructures, for example to assess the critical dimension (CD) or overlay performance of a lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. Photolithographic equipment may be used, for example, in the manufacture of integrated circuits (ICs). In such cases, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01B11/24G01N21/47G01N21/956
CPCG03F7/705G03F7/70625G01B2210/56G03F7/70633G03F1/44G01B11/272
Inventor M·P·敏克J·M·布鲁克I·塞蒂加
Owner ASML NETHERLANDS BV
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