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Method for estimating the temperature of a transistor

A technology for transistors and system temperature, applied in the application of transistors, thermometers, thermometers with electrical/magnetic components directly sensitive to heat, etc., can solve problems such as insufficient accuracy

Active Publication Date: 2019-10-25
DEERE & CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

During steady-state operation of a transistor using a thermistor (eg, a thermistor with a negative temperature coefficient), the estimated junction temperature of the transistor is more accurate than during transient operation, but for Still not accurate enough for some control applications of inverters driving electric motors

Method used

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  • Method for estimating the temperature of a transistor
  • Method for estimating the temperature of a transistor
  • Method for estimating the temperature of a transistor

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Embodiment Construction

[0015] The junction temperature applies to the junction of bipolar transistors. Die temperature means the junction temperature of a bipolar transistor, or the channel temperature of the depletion or enhancement channel of a field effect transistor, or the die temperature of any other transistor or semiconductor device. Junction or die temperature can be measured throughout the switching cycle or at any instant during the switching cycle. During switching cycles, the die temperature may change over a period of time, where, for example, at a fixed electrical load (e.g., from an inverter load driving an electric motor within range limits or at a constant rotor speed and torque) During steady-state operation at static ambient temperatures, temperature variations are reduced.

[0016] The following terms are used throughout this document:

[0017] Transistor voltage: (1)v ceon represents the on-state voltage drop or potential (e.g., on-state, steady-state voltage drop) between c...

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Abstract

The detector measures the change in turn-off voltage between the collector and emitter of the transistor versus time, and the peak voltage of the transistor at the collector. Based on the off-voltage variation and peak voltage, the electronic data processor determines intermediate parameters of off-current, on-current and on-state voltage drop. Based on the off-current, on-current and on-state voltage drop between the transistor's collector and emitter, the data processor determines the power loss or energy loss of the transistor over a switching cycle. The data processor estimates an associated average die temperature of the transistor over the switching cycle.

Description

[0001] This document claims priority under 35 U.S.C. 119(e) based on U.S. Provisional Application Serial No. 62 / 126,041, filed February 27, 2015, entitled "METHOD FORESTIMATING A TEMPERATURE OF A TRANSISTOR." technical field [0002] The present disclosure relates to methods for estimating the temperature of a transistor, and more particularly to methods for estimating the junction temperature or die temperature of a transistor. Background technique [0003] In semiconductor devices, some existing temperature sensing schemes use thermistors spaced apart from the semiconductor die to provide sufficient electrical isolation and reduce noise associated with semiconductor switching devices. During steady-state operation of a transistor using a thermistor (eg, a thermistor with a negative temperature coefficient), the estimated junction temperature of the transistor is more accurate than during transient operation, but for Still not accurate enough for some control applications o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01K3/04G01K13/00H02M1/00
CPCG01K3/04G01K13/00G01K7/42G01N33/0095G01K7/01G01N33/00H03K3/2821G01R19/04H03K17/68
Inventor 布立基·N·僧伽
Owner DEERE & CO