Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sc/Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and melt-process growth method thereof

A technology of yttrium lutetium silicate and growth method, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of poor energy resolution and strong background radiation, and achieve the goal of improving time resolution and accelerating lifespan Effect

Inactive Publication Date: 2016-10-05
ANHUI FIRESKY CRYSTAL SCI & TECH +1
View PDF9 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the disadvantage of LSO:Ce is that it contains 176 Lu, has a strong background radiation, and its energy resolution is not as good as GSO:Ce

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sc/Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and melt-process growth method thereof
  • Sc/Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and melt-process growth method thereof
  • Sc/Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and melt-process growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1 Growth of Sc 2x Ce 2y Lu 2(1-x-y) SiO 5 the crystal

[0026] Take x=0.1, y=0.0015 to grow Sc 2x Ce 2y Lu 2(1-x-y) SiO 5 Crystal, assuming that the raw material required for crystal growth is 100g, the crystal growth method of the melt method is as follows:

[0027] (1) Using Sc 2 o 3 , CeO 2 、Lu 2 o 3 , SiO 2 As a raw material, according to the chemical reaction formula: Carry out batching, take by weighing 3.19g Sc altogether in this proportion 2 o 3 , 0.12g CeO 2 , 82.78g Lu 2 o 3 , 13.91g SiO 2 Fully mix evenly to obtain the ingredient mixture;

[0028] (2) pressing the mixture into a round cake, and calcining at 1300° C. for 96 hours to obtain the initial raw material for crystal growth;

[0029] (3) Put the initial raw material for crystal growth into the growth iridium crucible, use the JGD600 single crystal furnace system, heat and fully melt through intermediate frequency induction to obtain the initial melt for crystal growth; ...

Embodiment 2

[0030] Example 2 Growth of Sc 2x Ce 2y Y 2z Lu 2(1-x-y-z) SiO 5 the crystal

[0031] Take x=0.1, y=0.0015, z=0.2 to grow Sc 2x Ce 2y Y 2z Lu 2(1-x-y-z) SiO 5 Crystal, assuming that the raw material required for crystal growth is 100g, the crystal growth method of the melt method is as follows:

[0032] (1) Using Sc 2 o 3 , CeO 2 、Lu 2 o 3 , SiO 2 As a raw material, according to the chemical reaction formula: Carry out batching, take by weighing 3.50g Sc altogether according to this ratio 2 o 3 , 0.13g CeO 2 , 69.66g Lu 2 o 3 , 11.46g Y 2 o 3 , 15.24g SiO 2 Fully mix evenly to obtain the ingredient mixture;

[0033] (2) pressing the mixture into a round cake, and calcining at 1300° C. for 96 hours to obtain the initial raw material for crystal growth;

[0034] (3) Put the initial raw material for crystal growth into the growth iridium crucible, use the JGD600 single crystal furnace system, heat and fully melt through intermediate frequency inductio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses Sc / Ce-codoped lutetium silicate and lutetium yttrium silicate crystals and a melt-process growth method thereof. The molecular formulae are Sc[2x]Ce[2y]Lu2[(1-x-y)]SiO[5] and Sc[2x]Ce[2y]Y[2z]Lu[2(1-x-y-z)]SiO[5]. The melt-process growth method comprises the following steps: as for the Sc[2x]Ce[2y]Lu2[(1-x-y)]SiO[5], proportionally preparing Sc2O3, CeO2, Lu2O3 and SiO2, sufficiently mixing, carrying out press forming, and carrying out high-temperature sintering to obtain a crystal growth initial raw material; or as for the Sc[2x]Ce[2y]Y[2z]Lu[2(1-x-y-z)]SiO[5], proportionally preparing Sc2O3, CeO2, Y2O3, Lu2O3 and SiO2, sufficiently mixing, carrying out press forming, and carrying out high-temperature sintering to obtain a crystal growth initial raw material; and heating to melt the growth initial raw material, and growing by a dip coating process or crucible descent process to obtain the scintillator monocrystals.

Description

technical field [0001] The invention relates to the field of inorganic scintillators and crystal growth required for the detection of high-energy rays or high-energy particles such as high-energy physics, nuclear medical imaging, etc., specifically two kinds of Sc, Ce co-doped lutetium silicate, yttrium-lutetium silicate crystals and their fused Body method growth method. Background technique [0002] The fast luminescence decay and high density characteristics of scintillators are the key indicators required by modern nuclear medicine imaging. Fast luminescence decay is conducive to the detection and resolution of physical events, to achieve the purpose of screening and detection of high-energy particles; in nuclear medicine imaging, fast decay scintillators will greatly shorten the imaging time and improve the inspection efficiency. At the same time, high-density scintillators have high stopping power and short irradiation length. Under the same detection sensitivity requ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/34
CPCC30B29/34
Inventor 张琦王小飞吕志萍
Owner ANHUI FIRESKY CRYSTAL SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com