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Semiconductor structures and methods of forming them

A semiconductor and graphic technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as the decline in the connection performance of the bonding surface and affect the bonding performance, and achieve the effect of resistance control

Active Publication Date: 2019-01-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, in the prior art, in order to reduce the process cost, Al pads are often formed directly on the surface of the substrate, so that during the Al-Ge bonding process, Al expands, resulting in a decrease in the connection performance of the bonding surface, thereby affecting the bonding performance.

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  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them
  • Semiconductor structures and methods of forming them

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Embodiment Construction

[0039] As mentioned in the prior art, the bonding performance of the existing bonding process is poor.

[0040] Please refer to figure 2 , is a schematic diagram of the packaging structure of a MEMS acceleration sensor, wherein the packaging process uses an Al-Ge-Al eutectic bonding process, and the bonding surface is figure 2 The part encircled by the middle dotted line includes the first aluminum pad 31 , the germanium pad 32 and the second aluminum pad 33 .

[0041] Please refer to image 3 ,for figure 2 The enlarged schematic diagram of the part encircled by the dashed circle. The method for forming the bonding surface of the package includes: forming a first aluminum pad 31 on the surface of the first substrate 30a; forming a second aluminum pad 33 on the surface of the second substrate 30b; Germanium pads 32 are then bonded. Under pressure and high temperature, the germanium pad 32 forms an AlGe eutectic alloy with the first aluminum pad 31 and the second aluminu...

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Abstract

The present invention provides a semiconductor structure and a formation method thereof. The formation method of the semiconductor structure comprises: providing a first substrate, and forming a first welding pad at the surface of the first substrate; forming a first side wall at the surface of the side wall of the first welding pad; providing a second substrate, forming a second welding pad at the surface of the second substrate; forming a second side wall at the surface of the side wall of the second welding pad; forming a third welding pad at the surface of the second welding pad; and bonding the second substrate and the first substrate to allow the first welding pad, the second welding pad and the third pad to form eutectic bonding. The performances of the formed semiconductor structure may be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As an interdisciplinary advanced manufacturing technology originated in the 1990s, micro-electromechanical systems (MEMS) are widely used to improve people's quality of life, improve people's living standards and enhance national strength. MEMS is a technology that uses the micro-processing technology of semiconductor integrated circuits to integrate sensors, brakes, and control circuits on tiny chips, also known as micro-nano technology. At present, it has been widely used in communication, automobile, optics, biology and other fields. [0003] Many MEMS devices need to work in a vacuum environment to reduce air resistance. Therefore, a bonding process is introduced to form a cover on the MEMS device, and the MEMS device is placed in a closed cavity formed by the cover and the substrate...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/60H01L23/485B81B7/02B81C1/00B81C3/00
CPCH01L2224/16
Inventor 伏广才宣荣峰
Owner SEMICON MFG INT (SHANGHAI) CORP