Fabrication method of multilayer tunneling junction three-dimensional tunneling field effect transistor

Abstract

The invention discloses a manufacturing method of a multilayer-tunneling-junction three-dimensional tunneling field effect transistor. The method comprises the following steps that heavily-doped p-type or n-type silicon and intrinsic or lightly-doped silicon are mutually overlapped and grown so as to form a multilayer surface tunneling junction structure; the heavily-doped p-type or n-type silicon is interconnected at one end and is taken as a source electrode of the transistor, heavily-doped n-type or p-type silicon is connected to the intrinsic or lightly-doped silicon so as to be taken as a drain electrode of the transistor; and a dielectric layer and a grid electrode material are grown on a side wall of the multilayer surface tunneling junction structure and an upper portion so as to form the three-dimensional tunneling field effect transistor of a multiple-grid structure. The method is suitable for a CMOS super-large scale integration circuit device. By using the method, characteristics of a low subthreshold slope, a low standoff current, a low operation voltage and the like of the tunneling field effect transistor can be realized, and simultaneously defects of a common tunneling field effect transistor, which are a low on-state current and a poor driving capability, are overcome.

Description

Technical field [0001] The invention relates to the technical field of semiconductor electronic devices, in particular to a method for preparing a multilayer tunnel junction three-dimensional tunnel field effect transistor. Background technique [0002] The integrated circuit technology based on CMOS technology is continuously developing in the sub-micron and nanometer direction. How to reduce device power consumption has become a major challenge for integrated circuit technology. The tunneling field effect transistor has a much smaller leakage current when it is turned off than the traditional structure transistor, thus significantly reducing the power consumption of the device. However, while its leakage current is reduced, its drive current also drops. How to increase the driving current of the tunneling field effect transistor has become an important research content. [0003] At present, there are a variety of methods used to increase the driving current of tunneling field ...

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However, while its leakage current decreases, its drive current also decreases

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