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MEMS acceleration sensor and manufacturing method thereof

The technology of an acceleration sensor and its manufacturing method is applied in the direction of measuring acceleration, speed/acceleration/shock measurement, acceleration measurement using inertial force, etc. It can solve problems such as complex control circuits, achieve cost reduction, ensure consistency, and accurately limit The effect of overload

Active Publication Date: 2016-10-12
GUANGDONG HEWEI INTEGRATED CIRCUIT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The defect of this technical solution is that the electrical feedback is used to limit the position. Although the possible mechanical fatigue failure of the mechanical limit structure is eliminated, the control circuit is complicated.

Method used

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  • MEMS acceleration sensor and manufacturing method thereof
  • MEMS acceleration sensor and manufacturing method thereof
  • MEMS acceleration sensor and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Such as Figure 5 , Figure 6 As shown, a structural schematic diagram of a MEMS acceleration sensor, which includes a silicon substrate 1, and a first predetermined cavity 11 formed in the silicon substrate 1, and is suspended above the first predetermined cavity 11 a second predetermined cavity 12 in the silicon membrane structure;

[0084] A semiconductor doped resistor 21 is formed at a predetermined position on the surface of the silicon substrate, and the semiconductor doped resistor 21 is electrically connected to the conductive line 3;

[0085] A first release groove 110 and a first connecting member 111 are formed above the first predetermined cavity 11, the first release groove 110 is set away from the semiconductor doped resistor 21,

[0086] A limit baffle 121, a second release groove 120, and a second connector 122 are formed above the second predetermined cavity 12, and the first release groove 110 combines with the second release groove 120 to form a su...

Embodiment 2

[0091] A method of manufacturing a MEMS acceleration sensor, wherein,

[0092] providing a silicon substrate;

[0093] forming a first predetermined cavity in the silicon substrate, and at least one second predetermined cavity in the suspended silicon film above the first predetermined cavity;

[0094] A semiconductor-doped resistor is formed on the surface of the silicon substrate, and the semiconductor-doped resistor is electrically connected to a conductive line;

[0095] Forming a first release groove and a first connecting member above the first predetermined cavity, the first release groove avoids the arrangement of the semiconductor doping resistor,

[0096] A limit baffle, a second release slot, and a second connector are formed above the second predetermined cavity, so that the first release slot combines with the second release slot to form a suspended release structure;

[0097] Wherein, one end of the limiting baffle is connected to the silicon substrate, and the...

Embodiment approach

[0106] Such as Figures 7A-7B , Figure 17 As shown, in step S1, the substrate silicon 100 is provided, and a first prefabricated cavity 101 for forming an acceleration sensor is formed on the substrate silicon; the acceleration sensor includes a first connecting member and a movable mass . The height of the first prefabricated cavity 101 is h1, and the height h1 of the first prefabricated cavity 101 is used to limit the distance of the vertical movement of the mass, especially the vertical downward movement of the mass (that is, the limit in the -Z direction), The height h1 of the first prefabricated cavity 101 can also be used to adjust air damping and improve the dynamic performance of the acceleration sensor. The thickness of the suspended silicon film on the first prefabricated cavity 101 is d 1 .

[0107] Step S2, forming a second predetermined cavity 102 for making a limit baffle in the suspended silicon film structure on the first prefabricated cavity 101 on the si...

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Abstract

The invention relates to the technical field of sensor processing, and especially relates to an MEMS acceleration sensor manufactured based on an MEMS processing technology. The MEMS acceleration sensor comprises a silicon substrate, a first predetermined cavity in the silicon substrate and a dangling silicon film above the first predetermined cavity, at least one second predetermined cavity and a dangling silicon film above the at least one second predetermined cavity, and a semiconductor doped resistor electrically connected with a conductive line. A first connector and a first release groove are formed above the first predetermined cavity. A limiting baffle, a second release groove and a second connector are formed above the second predetermined cavity. The first release groove and the second release groove are combined to form a dangling release structure. One end of the limiting baffle is connected with the silicon substrate, and the other end is freely dangling. One end of the first connector and one end of the second connector are connected with the silicon substrate, and the other end of the first connector and the other end of the second connector are connected with the dangling silicon film above the first predetermined cavity. Precise limiting overload protection is achieved through the limiting baffle in the dangling release structure. The MEMS acceleration sensor has a simple structure, and is easy to process.

Description

technical field [0001] The invention relates to the technical field of sensor processing, in particular to a MEMS acceleration sensor made based on a MEMS processing technology and a manufacturing method. Background technique [0002] With the continuous development of MEMS technology and the maturity of silicon micromachining technology, MEMS acceleration sensors are widely used because of their low price, high precision and suitability for mass production. [0003] Such as figure 1 As shown, the US Patent Application No. US5121633 discloses a processing method for an overload limiting device of a piezoresistive acceleration sensor. The limit along the Z axis is composed of a limit baffle 25 on the sensor, a limit baffle 26 on the base, and a limit distance 27. The manufacture and release of the limiting device adopts a wet process, for example, n-type silicon is used for the baffle structure, and p-type silicon is used for the spacing sacrificial layer, and wet etching i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/08B81B3/00B81C1/00
CPCB81B3/0051B81C1/00666G01P15/08G01P2015/0862
Inventor 周志健朱二辉陈磊杨力建邝国华
Owner GUANGDONG HEWEI INTEGRATED CIRCUIT TECH