HCPL-316J chip-based IGBT (Insulated Gate Bipolar Translator) driving circuit and switching circuit

A driving circuit and chip technology, applied to electrical components, output power conversion devices, etc., can solve problems such as lack of protection functions, complex peripheral circuits, insufficient work stability and reliability, etc.

Inactive Publication Date: 2016-10-12
UNIV OF SHANGHAI FOR SCI & TECH
View PDF1 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, it is of great theoretical significance and practical application value to devote ourselves to the research of IGBT drive circuit and its application circuit, and to develop a high-performance IGBT drive circuit, which will generate huge social and economic benefits. However, the existing drive circuit It has defects such as complex peripheral circuits, lack of protection functions, insufficient work stability and reliability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • HCPL-316J chip-based IGBT (Insulated Gate Bipolar Translator) driving circuit and switching circuit
  • HCPL-316J chip-based IGBT (Insulated Gate Bipolar Translator) driving circuit and switching circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0024] figure 1 It is the circuit diagram of the IGBT driving circuit based on the HCPL-316J chip of the present invention.

[0025] The chip that the present invention uses is the chip HCPL-316J that Agilent Company produces, and chip HCPL-316J passes through high-speed, high output current driver, input and output, local IGBT desaturation detection and closing, and high voltage between optical isolation fault state feedback signals These functions of optical isolation are combined into a 16-pin package chip. When the chip is working normally, the pulse signal required by the bridge arm is sent by the controller to the second pin V IN- , to drive the bridge arm normally.

[0026] attached figure 1 It is an IGBT drive circuit based on the HCPL-316J chip. HCPL-316J internally integrates collector-emitter voltage (V CE ) under-saturation detection circuit and fault status feedback circuit, with the functions of over-current soft shutdown, high-speed optocoupler isolation, u...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A kind of IGBT drive circuit based on HCPL-316J chip, comprises controller module, HCPL-316J chip, overcurrent protection module and overvoltage protection module, wherein the V of controller module and HCPL-316J chip IN+ , and The input terminal of the overcurrent protection module is connected to the fourteenth pin DESAT of the HCPL-316J chip and the output terminal C port is connected to the collector C of the IGBT. The overcurrent protection module includes at least one reverse diode connected in series , the overvoltage protection module includes a push-pull circuit composed of two switching transistors, the first voltage regulator tube ZD1, the second voltage regulator tube ZD2, the third voltage regulator tube ZD3 and two resistors R6 and R7, the first voltage regulator tube ZD1 The positive pole of the second voltage regulator tube ZD2 is connected to the positive pole of the third voltage regulator tube (ZD3), one end of the resistors R6 and R7 is respectively connected to the emission sets of the two switching transistors, and the other end G port is connected to the gate G of the IGBT. The negative terminal E port of the first regulator tube ZD1 is connected to the emitter terminal E of the IGBT. The utility model has the advantages of simple peripheral circuit, high working stability and reliability.

Description

technical field [0001] The invention relates to the driving technology of an insulated gate bipolar transistor (IGBT—Insulated Gate Bipolar Transistor) in the field of power electronics, in particular to an IGBT driving circuit based on an HCPL-316J chip. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) works safely. It combines the advantages of power transistor GTR and power field effect transistor MOSFET. It has the characteristics of self-shutoff and high switching frequency (10-40kHz). The most rapidly developing new generation of power electronic devices. Among them, the driving and protection of IGBT is one of the key technologies in its application. [0003] At present, most of the driving integrated circuits adopt direct driving or isolation driving. Commonly used IGBT drive modules have defects such as complex peripheral circuits, lack of protection functions, and insufficient work stability and reliability. [0004] IGBT is the core compon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08H02M1/32
CPCH02M1/08H02M1/32
Inventor 袁庆庆杨娜宋斌夏鲲王楠
Owner UNIV OF SHANGHAI FOR SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap