Forming method of semiconductor structure

Abstract

The invention provides a forming method of a semiconductor structure. The forming method includes the steps that a substrate is provided; an interface material layer is formed on the surface of the substrate through oxidation treatment; annealing treatment in an oxygen containing atmosphere is carried out on the interface material layer to form an interface layer, wherein the temperature of the annealing treatment is higher than that of the oxidation process; a dielectric layer is formed on the surface of the interface layer. By means of the method, the quality of the interface layer in the formed semiconductor structure can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] With the continuous improvement of the integration level of semiconductor devices and the reduction of technology nodes, the traditional gate dielectric layer continues to become thinner, and the leakage of transistors increases accordingly, causing problems such as waste of power consumption of semiconductor devices. In order to solve the above problems, the prior art provides a solution of replacing the polysilicon gate with a metal gate. The introduction of high-K metal gate technology has allowed the size of devices to continue to decline, allowing Moore's Law to continue. While strictly controlling the effective work function, gate leakage current, and gate size of the transistor, how to obtain an ultra-thin gate electrical thickness is the main challenge at present. [0003] The material ...

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Problems solved by technology

[0007] However, the quality of the interface layer 20 formed in the prior art is poor, which affects the performance of the formed transistor, and the quality of the interface layer needs to be further improved.

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