Segmented linear magnetic control memristor simulating equivalent circuit
A piecewise linear, equivalent circuit technology, applied in the field of efficient circuits, can solve problems such as limited operating frequency, no memristor, and inability to verify chaotic behavior, and achieve the effect of easy implementation, simplicity and realization
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[0023] The specific embodiments of the present invention will be further described below in conjunction with the drawings.
[0024] The memristor has a "memory" characteristic in a certain frequency range. When a certain frequency is exceeded, the "memory" function of the memristor disappears and degenerates into a linear resistance. For the equivalent circuit proposed by the present invention, the effective operating frequency range can be derived. Suppose the input voltage of the memristor is
[0025] v=Asinωt
[0026] Then the flux linkage at both ends of the memristor corresponds to (set the initial value to 0)
[0027]
[0028] It can be seen from the above working process that when the flux linkage at both ends of the memristor is always smaller than the threshold 1, that is
[0029]
[0030] When the memristor degenerates into a linear resistance, the corresponding conductance value is -1 / R a . It can be deduced that the effective operating frequency of the circuit is The eff...
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