Segmented linear magnetic control memristor simulating equivalent circuit

A piecewise linear, equivalent circuit technology, applied in the field of efficient circuits, can solve problems such as limited operating frequency, no memristor, and inability to verify chaotic behavior, and achieve the effect of easy implementation, simplicity and realization

Inactive Publication Date: 2016-11-02
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Since memristors are not commercialized, chaotic circuits can only be established on the basis of theoretical analysis, and its chaotic behavior cannot be verified from the circuit
Although analog equivalent implementation circuits for smooth memristors have been proposed in the literature, the operating frequency is very limited

Method used

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  • Segmented linear magnetic control memristor simulating equivalent circuit
  • Segmented linear magnetic control memristor simulating equivalent circuit
  • Segmented linear magnetic control memristor simulating equivalent circuit

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Embodiment Construction

[0023] The specific embodiments of the present invention will be further described below in conjunction with the drawings.

[0024] The memristor has a "memory" characteristic in a certain frequency range. When a certain frequency is exceeded, the "memory" function of the memristor disappears and degenerates into a linear resistance. For the equivalent circuit proposed by the present invention, the effective operating frequency range can be derived. Suppose the input voltage of the memristor is

[0025] v=Asinωt

[0026] Then the flux linkage at both ends of the memristor corresponds to (set the initial value to 0)

[0027]

[0028] It can be seen from the above working process that when the flux linkage at both ends of the memristor is always smaller than the threshold 1, that is

[0029]

[0030] When the memristor degenerates into a linear resistance, the corresponding conductance value is -1 / R a . It can be deduced that the effective operating frequency of the circuit is The eff...

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Abstract

The invention discloses a segmented linear magnetic control memristor simulating equivalent circuit. The circuit comprises a follower, a phase inverter, a phase-reversing integrator, a window comparator, a voltage control switch S and a negative impedance converter and the above parts are connected in series. The follower is an operational amplifier U1 and is mainly used for isolation. The phase inverter is an operational amplifier U2. The phase-reversing integrator is an operational amplifier U3 and realizes integration of memristor port voltages. Output v3out of the operational amplifier U3 is corresponding to an inner state control variate phi (t) of a memristor. The window comparator comprises an operational amplifier U4 and an operational amplifier U5. An output level of the window comparator controls switching of the voltage control switch S. An operational amplifier U6 and a peripheral resistor form the negative impedance converter. When v3out is less than or equal to 1, the window comparator outputs a low electrical level, the voltage control switch S is switched off and conductance of the memristor is -1/Ra, and when v3out is greater than 1, the window comparator outputs a high electrical level, the voltage control switch S is switched on and conductance of the memristor is (-1/Ra+1/Rb). The circuit has the characteristics of simple line and good effects.

Description

Technical field [0001] The invention relates to the field of analog electronic circuits, in particular to an analog equivalent circuit of a piecewise linear magnetron memristor. Background technique [0002] In May 2008, the HP laboratory research team used nanotechnology to realize a resistor with "memory" characteristics, thus confirming the concept of memristor and related theories. As the fourth basic passive device in parallel with resistance, inductance, and capacitance, the memristor establishes the relationship between the flux linkage and the charge, and its resistance is related to the voltage amplitude, polarity and working time at both ends. Because the memristor has a "memory" function, its potential application value has attracted widespread attention from scholars at home and abroad. Using its digital working mode, the memristor can realize non-volatile impedance memory (RRAM) and field programmable gate array (FPGA); using its analog working mode, the memristor c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0021
Inventor 潘丰高敏
Owner JIANGNAN UNIV
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