2.7-3.5GHz 2W GaN monolithic power amplifier and design method

Abstract

The invention discloses a 2.7-3.5GHz 2W GaN monolithic power amplifier and a design method. The amplifier comprises an input matching network, an inter-stage matching network, an output matching network and pHEMT transistors; the input matching network is connected with the inter-stage matching network through one pHEMT transistor; the inter-stage matching network is connected with the output matching network through the other pHEMT transistor; a gate bias power source is connected with the input matching network and the inter-stage matching network; and a drain bias power source is connected with the inter-stage matching network and the output matching network. According to the 2.7-3.5GHz 2W GaN monolithic power amplifier and the design method of the invention, the design difficulty of a modular circuit is simplified, the size of the modular circuit is reduced significantly compared with the size of a traditional hybrid integrated circuit; the optimal load impedance and optimal source impedance of the transistors are determined; the circuit schematic diagrams of the input matching network, the output matching network and the inter-stage matching network are designed; indexes such as a stabilization coefficient, an input and output standing wave system, gain, power, efficiency and harmonic suppression are optimized; and the layout of the monolithic microwave power amplifier is designed.

Description

technical field [0001] The patent of the present invention relates to microelectronic technology, microwave technology, semiconductor monolithic integration technology, advanced material technology and microwave power amplification technology, especially miniaturization, high efficiency, high power density monolithic microwave integrated power amplification technology, especially a 2.7 -3.5 GHz 2W GaN Monolithic Power Amplifier and Design Methodology. Background technique [0002] Monolithic Microwave Integrated Circuit (MMIC) has become an important pillar for the development of various high-tech weapons, and has been widely used in various advanced tactical missiles, electronic warfare, communication systems, land, sea and air-based various advanced Phased array radars (especially airborne and spaceborne radars) have formed rapidly in civil and commercial mobile phones, wireless communications, personal satellite communication networks, global positioning systems, direct b...

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Problems solved by technology

[0005] Amplifiers using WIN Foundry's NP25-00 GaN process take into account the slow gain compression of GaN devices, and generally reach the maximum power or efficiency point at the 8-10dB gain compression point, so the linearity of GaN power amplifiers is poor, so the harmonic suppression also poor

The small-signal gain is about 29-31dB, which requires two stages of amplification; considering that the higher small-signal gain will lead to a decrease in stability, the amplifier is prone to self-oscillation, so it is necessary to design all levels of matching and power supply bias network very carefully , the control amplifier gain and the stability factor

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