2.7-3.5ghz 2W GaN monolithic power amplifier and its design method

Abstract

Disclosed are a 2.7-3.5 GHz 2W GaN monolithic power amplifier and a design method thereof. The amplifier comprises an input matching network, an interstage matching network, an output matching network, and a pHEMT transistor. The input matching network is connected to the interstage matching network by means of the pHEMT transistor. The interstage matching network is connected to the output matching network by means of the pHEMT transistor. A gate bias power supply is respectively connected to the input matching network and the interstage matching network. A drain bias power supply is respectively connected to the interstage matching network and the output matching network. The design method addresses the difficulties of designing a modular circuit, is much smaller than a traditional hybrid integrated circuit, determines an optimal load impedance and an optimal source impedance of a chip, provides a circuit diagram associated with the input, output and interstage matching networks, optimizes parameters, including a stability coefficient, an input and output standing wave system, a gain, a power, efficiency and harmonic suppression, and provides a layout for a monolithic microwave power amplifier.

Description

technical field [0001] The patent of the present invention relates to microelectronic technology, microwave technology, semiconductor monolithic integration technology, advanced material technology and microwave power amplification technology, especially miniaturization, high efficiency, high power density monolithic microwave integrated power amplification technology, especially a 2.7 -3.5 GHz 2W GaN Monolithic Power Amplifier and Design Methodology. Background technique [0002] Monolithic Microwave Integrated Circuit (MMIC) has become an important pillar for the development of various high-tech weapons, and has been widely used in various advanced tactical missiles, electronic warfare, communication systems, land, sea and air-based various advanced Phased array radars (especially airborne and spaceborne radars) have formed rapidly in civil and commercial mobile phones, wireless communications, personal satellite communication networks, global positioning systems, direct b...

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Problems solved by technology

[0005] Amplifiers using WIN Foundry's NP25-00 GaN process take into account the slow gain compression of GaN devices, and generally reach the maximum power or efficiency point at the 8-10dB gain compression point, so the linearity of GaN power amplifiers is poor, so the harmonic suppression also poor

The small-signal gain is about 29-31dB, which requires two stages of amplification; considering that the higher small-signal gain will lead to a decrease in stability, the amplifier is prone to self-oscillation, so it is necessary to design all levels of matching and power supply bias network very carefully , the control amplifier gain and the stability factor

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