4.0-5.0ghz 8W GaN Monolithic Power Amplifier and Design Method

Abstract

Disclosed are a 4.0-5.0 GHz 8W GaN monolithic power amplifier and a design method thereof. The amplifier comprises an input matching network, an interstage matching network, an output matching network, and a set of pHEMT transistors. The input matching network is connected to the interstage matching network by means of one pHEMT transistor. The interstage matching network is connected to the output matching network by means of four pHEMT transistors. A gate bias power supply is respectively connected to the input matching network and the interstage matching network. An interstage gate matching bias power supply is respectively connected to the interstage matching network and the output matching network. The invention addresses the difficulties of designing a modular circuit, is much smaller than a conventional hybrid integrated circuit, determines an optimal load impedance and an optimal source impedance of a chip, provides a circuit diagram associated with the input, output and interstage matching networks, optimizes parameters, including a stability coefficient, an input and output standing wave system, a gain, a power, efficiency and harmonic suppression, and provides a layout for a monolithic microwave power amplifier.

Description

technical field [0001] The patent of the present invention relates to microelectronic technology, microwave technology, semiconductor monolithic integration technology, advanced material technology and microwave power amplification technology, especially miniaturization, high efficiency, high power density monolithic microwave integrated power amplification technology, especially a 4.0 -5.0 GHz 8W GaN Monolithic Power Amplifier and Design Methodology. Background technique [0002] Monolithic Microwave Integrated Circuit (MMIC) has become an important pillar for the development of various high-tech weapons, and has been widely used in various advanced tactical missiles, electronic warfare, communication systems, land, sea and air-based various advanced Phased array radars (especially airborne and spaceborne radars) have formed rapidly in civil and commercial mobile phones, wireless communications, personal satellite communication networks, global positioning systems, direct b...

AI Technical Summary

Problems solved by technology

The amplifier using WIN Foundry's NP25-00 GaN process takes into account the slow gain compression of GaN devices, and generally reaches the maximum power or efficiency point at the 8-10dB gain compression point, so the linearity of the GaN power amplifier is poor, so the harmonic suppression also poor

The small-signal gain is about 29-31dB, which requires two stages of amplification; considering that the higher small-signal gain will lead to a decrease in stability, the amplifier is prone to self-oscillation, so it is necessary to design all levels of matching and power supply bias network very carefully , the control amplifier gain and the stability factor

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