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Detection method for abnormal thickness of photoresist

A detection method and a technology of photoresist, which are applied in the direction of microlithography exposure equipment, photolithography exposure device, etc., can solve the problems of abnormal thickness of photoresist and the inability to monitor the thickness of photoresist sensitively in real time, and achieve The effect of improving the yield rate

Active Publication Date: 2018-03-23
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0005] The purpose of this application is to provide a detection method for abnormal thickness of photoresist to solve the problem that the thickness of photoresist cannot be monitored in real time and sensitively in the prior art

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  • Detection method for abnormal thickness of photoresist
  • Detection method for abnormal thickness of photoresist
  • Detection method for abnormal thickness of photoresist

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Embodiment Construction

[0028] It should be pointed out that the following detailed description is exemplary and intended to provide further explanation to the present application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0029] It should be noted that the terminology used here is only for describing specific implementations, and is not intended to limit the exemplary implementations according to the present application. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural, and it should also be understood that when the terms "comprising" and / or "comprising" are used in this specification, they mean There are features, steps, operations, means, components and / or combinations thereof.

[0030] For the convenience of description, spatially relative terms may be used here, such as "on ...", "over .....

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Abstract

The present application provides a method for detecting abnormal thickness of photoresist. The detection method includes: Step S1, forming a first photolithographic pattern in the dicing lane of the wafer, the first photolithographic pattern includes at least one first photolithographic rectangle, and the first photolithographic rectangle forms a step structure with the surface of the wafer; Step S2, On the surface of the wafer with the stepped structure, a second photolithographic pattern is formed, the second photolithographic pattern includes at least two second photolithographic rectangles, the width of the second photolithographic rectangle corresponds to the target critical dimension, the second photolithographic pattern and The first lithography pattern is vertical and mutually isolated; step S3, obtain the width difference of two second lithography rectangles; step S4, judge whether the width difference is greater than the standard deviation value, when the width difference is greater than the standard deviation value, Abnormal photoresist thickness. The method can detect whether the thickness of the photoresist is abnormal in real time, sensitively and accurately.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to a detection method for abnormal thickness of photoresist. Background technique [0002] The thickness of the photoresist is crucial to the photolithography process, because changes in the thickness of the photoresist will lead to changes in the etching pattern, which will affect the critical dimensions of the wafer and further affect the yield of the device. [0003] In the prior art, an off-line monitor is often used to monitor the thickness of photoresist of each batch of wafers, and only once a week, and the thickness of photoresist of each batch of wafers cannot be monitored in real time. [0004] In addition, in the photolithography process, in order to obtain better exposure latitude and development effect, the thickness of the photoresist is usually set to the thickness corresponding to the peak or trough of the swing curve. However, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 杨晓松易旭东
Owner SEMICON MFG INT (SHANGHAI) CORP
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