Substrate processing apparatus and substrate processing method
A technology of a substrate processing device and a substrate processing method, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of inability to obtain removal performance, and achieve the effect of sufficient removal performance
Active Publication Date: 2021-03-05
TOKYO ELECTRON LTD
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Problems solved by technology
However, in the case of polymer removal, sufficient removal performance cannot be obtained only by the method of Patent Document 1
Method used
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Embodiment Construction
[0024] figure 1 It is a figure which shows the schematic structure of the substrate processing system of this embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is assumed to be vertically upward.
[0025] Such as figure 1 As shown, a substrate processing system 1 has an input and output station 2 and a processing station 3 . The input / output station 2 and the processing station 3 are arranged adjacently.
[0026] The input / output station 2 has a carrier placement unit 11 and a transport unit 12 . A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 11 .
[0027] The transfer unit 12 is provided adjacent to the carrier placement unit 11 , and a substrate transfer device 13 and a delivery unit 14 are provided inside the transfer unit 12 . The substrate transfer devic...
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The invention provides a substrate processing device and a substrate processing method. When the polymer attached to the substrate is removed using droplets of the chemical solution generated by mixing the chemical solution and the gas, sufficient removal performance is obtained. The substrate processing apparatus has a first nozzle (41) for mixing the gas supplied from the gas supply mechanism (71B) and the heated chemical solution supplied from the heating chemical solution supply mechanism (71A). The droplets of the chemical solution are sprayed toward the surface of the substrate (W); the second nozzle (47) is used to spray heated pure water supplied from the heated pure water supply mechanism (75) toward the back surface of the substrate. The first nozzle supplies liquid droplets to the surface of the substrate whose temperature has been raised by heating from the back side with the heated pure water supplied from the second nozzle.
Description
technical field [0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by discharging droplets of a chemical solution generated by mixing a chemical solution and a gas onto a substrate. Background technique [0002] In the manufacturing process of semiconductor devices, the cleaning process can be performed by combining a chemical solution such as SC-1 (mixed solution of ammonia water and hydrogen peroxide water) with the flow of gas and spraying it on the surface of a substrate such as a semiconductor wafer. Contaminants such as particles and polymers attached to the surface of the substrate are removed. When performing this cleaning process using a single-sheet cleaning apparatus, the substrate is held on a substrate holder called a spin chuck, and the substrate is rotated around a vertical axis. A chemical solution is supplied to the substrate from a nozzle located above the rotating substrate...
Claims
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IPC IPC(8): H01L21/67H01L21/02
CPCH01L21/02057H01L21/67023H01L21/67017H01L21/68792H01L21/67051H01L21/02041H01L21/02052H01L21/324H01L21/54H01L21/67098H01L21/67248H01L21/68764H01L21/6708
Inventor 石田省贵福井祥吾篠原英隆
Owner TOKYO ELECTRON LTD