A silicon-based microdisplay
A technology of micro-display and display devices, which is applied to static indicators, instruments, etc., can solve the problems of reducing the amount of transmitted data and low utilization rate of screen display, and achieve the goal of improving pixel utilization rate, system performance and utilization rate Effect
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Embodiment 1
[0061] see figure 1 , a silicon-based microdisplay is characterized in that a silicon-based driving circuit (100) and a display device (801) are integrated on the same semiconductor silicon chip, the display device (801) is located on the surface of the semiconductor silicon chip, and the silicon The base drive circuit (100) includes:
[0062] (1) Pixel circuit array (101), consisting of M×N pixel units, M, N are integers greater than or equal to 1 and M=N, the number of pixels in the horizontal direction and the vertical direction is equal, each pixel unit can Generate the voltage and current required by the display device (801), and drive the display device (801) to emit light;
[0063] (2) a horizontal drive circuit (102), used to generate a horizontal signal group (301) for horizontal display control of the pixel array (101);
[0064] (3) a vertical direction driving circuit (103), for generating a vertical data signal group (302) for use by pixels of the pixel circuit a...
Embodiment 2
[0074] This embodiment is basically the same as Embodiment 1, and the special features are as follows:
[0075] see Figure 11 A silicon-based microdisplay pixel circuit array drive circuit also includes an interface conversion module (105); the interface conversion module (105) converts the internal microdisplay (602) into a horizontal signal (400) and a vertical signal (500) ;
Embodiment 3
[0077] see Figure 12 , the pixel circuit unit in the pixel circuit array (101) is composed of a memory unit (111) and a drive unit (112); the memory unit (111) is used to save the switch state of the pixel, and its input is a horizontal selection Through signal (311) and vertical data signal (312); Described horizontal strobe signal (311) is a signal in the horizontal strobe signal group (301), is used for strobing this row to be effective; Described column data signal ( 312) is a signal in the vertical data signal group (302), used to represent the data signal of the column; the memory unit (111) and the drive unit (112) use the same positive power supply.
[0078] The memory unit (111) can be a static memory unit or a dynamic memory unit, the static memory unit does not have a capacitor, and is composed of 4-10 transistors, and the dynamic memory cell is composed of 1-2 capacitors and 1-3 Composed of transistors; the transistors are metal-oxide semiconductor field effect t...
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