SRAM unit
A technology of transistors and transfer transistors, applied in information storage, static memory, digital memory information, etc., can solve the problems of large lead tasks, heavy loads, and reduced service life, and achieve the effect of high working stability
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no. 2 example
[0094] refer to Figure 5 , compared with the first embodiment, the difference of the second embodiment is:
[0095] The first interconnection layer 60' includes a word line WL and two power supply lines Vdd;
[0096] The second interconnection layer 70' includes a first bit line BL, a second bit line BLB, and two ground lines Vss.
[0097] Correspondingly, the first interconnection layer 60' further includes: a first interconnection 61 located below each grounding line Vss, and the grounding line Vss is electrically connected to the lower first interconnection 61 through a first-layer conductive plug 81'. connect.
[0098] In this embodiment, in the first interconnection layer 60', it is necessary to control the signals on the word line WL and the power connection Vdd through two different peripheral control circuits, and the first interconnection layer 60' needs to arrange two sets of peripheral Control circuit access. In contrast, in the second interconnection layer 70'...
no. 3 example
[0103] refer to Figure 6 , compared with the first and second embodiments, the difference of the third embodiment is:
[0104] The first interconnection layer 600 includes: a first bit line BL, a second bit line BLB and a power connection Vdd;
[0105] The second interconnection layer 700 above the first interconnection layer 600 includes: a word line WL and two ground lines Vss.
[0106] Compared with the first and second embodiments, in this embodiment, the first bit line BL and the second bit line BLB are located between the zero-level interconnection layer (not shown in the figure) and the second interconnection layer 700 between. The word line WL is a stronger signal line than the first and second bit lines, and the first bit line BL and the second bit line BLB are weaker signal lines. The interconnection layer of the peripheral control circuit of the SRAM unit is erected above the SRAM unit. When the first and second bit lines are above the word line WL, the signals ...
no. 4 example
[0109] refer to Figure 7 , compared with the third embodiment, the difference of the fourth embodiment is:
[0110] The first interconnect layer 620 includes: a first bit line BL, a second bit line BLB and a ground line Vss;
[0111] The second interconnection layer 720 includes: a word line WL and two power lines Vdd. Compared with the third embodiment, the two power supply lines Vdd of the present embodiment are separated into two parts by the word line WL.
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