Organic electroluminescent device
An electroluminescence device and a luminescence technology, applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of insufficient energy utilization and high voltage
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Embodiment 1
[0330] The organic electroluminescence device structure of the present embodiment is as follows:
[0331] ITO / MTDATA:4%F4TCNQ(100nm) / NPB(20nm) / Host(compound 2-3):30%Host(compound 1-16):1%rubrene(30nm) / Alq3(30nm) / LiF(1nm) / Al(150nm)
[0332] The light-emitting layer of this embodiment adopts two kinds of TADF materials as light-emitting hosts (the first host Host (compound 2-3) and the second host Host (compound 1-16), and Host (compound 1-16) accounts for 30% of the mass of the light-emitting layer. %, the difference between the two band gaps >0.2eV), using a fluorescent material rubrene as a dye (accounting for 1% of the mass of the light-emitting layer). Wherein, the photoluminescence spectrum of the second host material is basically consistent with the absorption spectrum of the fluorescent dye, and after highly normalized, the wavelength difference corresponding to the peak is within 50 nm.
Embodiment 2
[0334] The organic electroluminescence device structure of the present embodiment is as follows:
[0335] ITO / MTDATA:4%F4TCNQ(100nm) / NPB(20nm) / Host(Compound 2-3):30%Host(Compound 1-16):1% Dopant(Compound 2-16)(30nm) / Alq3(30nm) ) / LiF(1nm) / Al(150nm)
[0336] The light-emitting layer of this embodiment adopts two kinds of TADF materials as light-emitting hosts (the first host Host (compound 2-3) and the second host Host (compound 1-16), and Host (compound 1-16) accounts for 30% of the mass of the light-emitting layer. %), using a heat-activated delayed fluorescent material Dopant (compound 2-16) as a dye (accounting for 30% of the mass of the light-emitting layer). Wherein, the photoluminescence spectrum of the second host material is basically consistent with the absorption spectrum of the fluorescent dye, and after highly normalized, the wavelength difference corresponding to the peak is within 50 nm.
[0337]
[0338] 2-16
[0339] The experimental data of above-mentione...
Embodiment 3
[0349] The organic electroluminescence device structure of the present embodiment is as follows:
[0350] ITO / MTDATA:4%F4TCNQ(100nm) / NPB(20nm) / Host(2-8):30%Host (2-16):1%DCM (30nm) / Alq3(30nm) / LiF(1nm) / Al (150nm)
[0351] The light-emitting layer of this embodiment uses two kinds of TADF materials as light-emitting hosts (the first host Host (2-8) and the second host Host (2-16), Host (2-16) accounts for 30% of the mass of the light-emitting layer, and the second host Host (2-16) accounts for 30% of the mass of the light-emitting layer. The difference between the forbidden band width of those >0.2eV)), a fluorescent material DCM is used as the dye (accounting for 1% of the mass of the light-emitting layer). Wherein, the photoluminescence spectrum of the second host material is basically consistent with the absorption spectrum of the fluorescent dye, and after highly normalized, the wavelength difference corresponding to the peak is within 50 nm.
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