Method and wafer for improving current conduction rate of wafer metal plating

Abstract

The present invention relates to a method and a wafer for improving the current conductivity of metal electroplating on a wafer. By preparing a first electroplating metal conduction structure and a plurality of metal electrodes on the wafer, the first electroplating metal conduction structure is respectively associated with each The metal electrodes are connected to each other, so that a current conduction network is formed between each metal electrode in the wafer; at the same time, the connection point between the first electroplated metal conduction structure and the metal electrode is located in the central area of ​​the wafer body, and the first electroplated metal The part of the conduction structure connected with metal electrodes at both ends is also located in the central area of ​​the wafer body, so the above-mentioned current conduction network can avoid the damage of the clamp clamping during the process, even if the edge area of ​​the wafer is defective, it can be The integrity of the above-mentioned current conduction network is ensured, thereby ensuring the current conduction rate during metal electroplating; in addition, the method provided by the present invention also completes the preparation of the first electroplating metal conduction structure while preparing the metal electrode. The process flow Simple and easy to implement.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a method and a wafer for improving the metal plating current conduction rate of a wafer. Background technique [0002] In the semiconductor chip manufacturing process, multiple regularly arranged chips are usually prepared on the wafer at one time. Among them, when preparing the metal electrodes of the chip, the metal is usually deposited on the wafer to form electrodes, and then electroplating is used. The process thickens the electrode metal on the basis of the electrode. In order to make the metal thickening work of each electrode on the wafer can be completed synchronously through one electroplating process, before electroplating, an electroplating metal conduction structure will be prepared on the wafer in advance, and the electroplating metal conduction structure will be used to connect the electrodes on the wafer. The electrodes are connected to form a curren...

AI Technical Summary

Problems solved by technology

Since the wafer substrates of semiconductor lasers are mostly made of materials such as gallium arsenide and indium phosphide, the above-mentioned substrate materials are relatively brittle, so the edge of the wafer clamped by tweezers for many times is often damaged, resulting in Electroplated metal conduction structure defect

When the defect position of the electroplated metal conduction structure is just the connection point between the electrode and the electroplated metal conduction structure, the electrode cannot form a current conduction network with other electrodes, and the electrode cannot be electroplated with metal during electroplating.

Therefore, the electroplating metal conduction structure has the problem that the conduction rate of the metal electroplating current is reduced, which greatly affects the yield rate of the semiconductor laser chip.

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