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Sm-Co based permanent-magnet thin film and preparation method thereof

A thin film, permanent magnet technology, applied in the direction of magnetic layer, substrate/interlayer, magnetic film to substrate application, etc., can solve the problem of shedding performance, low, etc., to reduce cracking, enhance chemical bonding force, reduce shrinkage difference Effect

Active Publication Date: 2016-12-21
HEZE HUAYI CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical purpose of the present invention is to provide a Sm-Co-based permanent magnet film with high performance and strong film-base bonding for the above-mentioned problems that the Sm-Co-based permanent magnet film on the surface of the substrate is easy to fall off from the surface of the substrate at a higher heat treatment temperature and has low performance. -Co-based permanent magnet thin film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] In this embodiment, the substrate of the Sm-Co based permanent magnet thin film is Si substrate, the buffer layer is between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 0.5 μm. The buffer layer has a four-layer structure, one layer is a Cu thin film layer with a thickness of 5 nm on the surface of the substrate, a W-Cu thin film layer on the surface of the Cu thin film layer with a thickness of 50 nm; A Ni-W film layer with a thickness of 20nm; a Ni film layer with a thickness of 10nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 0.5 μm located on the surface of the Ni film layer.

[0039] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:

[0040] Step 1: Prepare Si substrate;

[0041] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the spu...

Embodiment 2

[0048] In this embodiment, the Sm-Co-based permanent magnet thin film uses Si(100) as the substrate, a buffer layer between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 60 μm. The buffer layer has a four-layer structure, one layer is a Cu film layer with a thickness of 10nm on the surface of the substrate, a W-Cu film layer with a thickness of 25nm on the surface of the Cu film layer; A Ni-W film layer with a thickness of 50nm; a Ni film layer with a thickness of 35nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 60μm located on the surface of the Ni film layer.

[0049] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:

[0050] Step 1: Prepare Si substrate;

[0051] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the sputtering temperature is room...

Embodiment 3

[0058] In this embodiment, the Sm-Co-based permanent magnet thin film uses Si(100) as the substrate, a buffer layer between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 100 μm. The buffer layer has a four-layer structure, one layer is a Cu film layer with a thickness of 20nm on the surface of the substrate, a W-Cu film layer on the surface of the Cu film layer with a thickness of 200nm; A Ni-W film layer with a thickness of 100nm; a Ni film layer with a thickness of 50nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 100μm located on the surface of the Ni film layer.

[0059] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:

[0060] Step 1: Prepare Si(100) substrate;

[0061] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the sputtering temperatur...

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Abstract

The invention discloses a Sm-Co based permanent-magnet thin film and a preparation method thereof, and relates to the technical field of Sm-Co based permanent-magnet thin films. The Sm-Co based permanent-magnet thin film comprises a substrate and a Sm-Co thin film layer, wherein the Sm-Co thin film layer is arranged on a surface of the substrate, a buffer layer is arranged between the substrate and the Sm-Co thin film layer and has a four-layer structure, one layer is a Cu thin film layer arranged on the surface of the substrate, a W-Cu thin film is arranged on a surface of the Cu thin film layer, a Ni-W thin film layer is arranged on a surface of the W-Cu thin film layer, and a Ni thin film layer is arranged on a surface of the Ni-W thin film layer. By using a magnetron sputtering method, the obtained Sm-Co based permanent-magnet thin film has relatively high film-based binding force, no crack appears after high-temperature processing on the Sm-Co based permanent-magnet thin film, and the Sm-Co based permanent-magnet thin film has relatively high magnetic performance.

Description

technical field [0001] The invention belongs to the technical field of permanent magnetic thin films, and in particular relates to a Sm-Co based permanent magnetic thin film with high film-based bonding force in high-temperature heat treatment and a preparation method thereof. Background technique [0002] Permanent magnet thin films are mainly used in the fields of magnetic micromachines and micromotors. SmCo is a new generation of high-performance permanent magnet materials. The high Curie temperature and excellent corrosion resistance make SmCo have good application prospects in high temperature and other special environments. Currently Most of the processes use SmCo alloy targets to produce high-performance SmCo thin film materials through magnetron sputtering, electroplating, or electroless plating. [0003] Although the Sm-Co-based permanent magnetic film deposited on the surface of the silicon substrate has important applications in magnetic micro-electromechanical sy...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/16H01F10/30H01F41/18
CPCH01F10/16H01F10/30H01F41/18
Inventor 吴小平王顺利史建君李小云金立杨欧
Owner HEZE HUAYI CHEM
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