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Process model modeling and correcting method based on graph density

A technology of pattern density and process model, which is applied in special data processing applications, instruments, electrical digital data processing, etc., and can solve the problems of difficulty in guaranteeing model accuracy, large pattern density variation range, and large test pattern density graduation range. , to achieve the effect of improving precision and improving accuracy

Active Publication Date: 2017-01-04
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

Due to the pattern distribution from dense to isolated in the test pattern, the density scale range of the test pattern is relatively large; in addition, from the point of view of the pattern density of the chip design, although redundant patterns are added, due to the existence of redundant patterns, it is forbidden to add region, or the influence of a large-area graphic area, the range of graphic density changes is also large
[0010] Those skilled in the art know that if the same model is used to simulate the layout data with large pattern density changes, the accuracy of the model cannot be guaranteed

Method used

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  • Process model modeling and correcting method based on graph density
  • Process model modeling and correcting method based on graph density

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Embodiment 1

[0078] It is clear to those skilled in the art that, from the actual product pattern density analysis, if redundant pattern processing is added, the typical pattern density range is between 10% and 80%, and the average pattern density is about 30% to 40%. The pattern density of the active region layer is slightly higher, and the density of the polysilicon layer is slightly lower.

[0079] In this embodiment, the case where N is equal to 3 is selected for detailed description.

[0080] Assuming that the average density is 40%, the low density is 20%, and the high density is 60% as the target test pattern densities, three sets of OPC test patterns are designed respectively to build models with three different pattern density ranges. The specific steps can be as follows:

[0081] ①. Design the initial test pattern group required for OPC model calibration according to the layout design rule (Design Rule) and the lithography target. These test patterns can include a pattern group d...

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Abstract

The invention provides a process model molding and correcting method based on a graph density. The method comprises the steps that by adding redundant graphs with different graph densities and adjusting the OPC test graph region area, a test graph of a target graph density is obtained; according to silicon wafer data calibration models collected by the test graphs with different graph density ranges, OPC models under different graph density ranges are obtained; in the OPC processing process, a model representing the average density is used for correcting the whole layout data, layout density distribution is analyzed, graph areas with low density and high density are selected and subjected to correction with corresponding models respectively, and a mask graph is obtained finally.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a process model modeling and correction method based on pattern density. Background technique [0002] Optical proximity correction (OPC) technology has been widely used in the mass production of deep sub-micron integrated circuits. Model-based OPC processing methods are widely used in key-level publications below the 90nm technology node. [0003] The basic principle of the model-based OPC processing method is: simulate the shape and size of the pattern after exposure or etching through the model, make corresponding corrections according to the deviation between the simulated data and the target data, and obtain the final mask after several iterations. graphics. [0004] Therefore, the accuracy of OPC processing mainly depends on two aspects, one is the accuracy of the model, which is the ability of the model to predict the exposure (including etching) process fl...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/398G06F2119/18
Inventor 何大权魏芳赵月兴倪念慈朱骏
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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