A Process Model Modeling and Correction Method Based on Pattern Density

A pattern density and process model technology, which is applied in the direction of instruments, calculations, electrical digital data processing, etc., can solve the problems that the accuracy of the model is difficult to be guaranteed, the pattern density changes in a large range, and the test pattern density scale range is large, so as to improve Accuracy, the effect of improving precision

Active Publication Date: 2019-08-20
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

Due to the pattern distribution from dense to isolated in the test pattern, the density scale range of the test pattern is relatively large; in addition, from the point of view of the pattern density of the chip design, although redundant patterns are added, due to the existence of redundant patterns, it is forbidden to add region, or the influence of a large-area graphic area, the range of graphic density changes is also large
[0010] Those skilled in the art know that if the same model is used to simulate the layout data with large pattern density changes, the accuracy of the model cannot be guaranteed

Method used

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  • A Process Model Modeling and Correction Method Based on Pattern Density
  • A Process Model Modeling and Correction Method Based on Pattern Density
  • A Process Model Modeling and Correction Method Based on Pattern Density

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Embodiment 1

[0078] Those skilled in the art know that from the actual product pattern density analysis, if redundant pattern processing is added, the typical pattern density ranges from 10% to 80%, and the average pattern density is about 30% to 40%. Metal layers and The pattern density of the active region layer is slightly higher, and the density of the polysilicon layer is slightly lower.

[0079] In this embodiment, the case where N is equal to 3 is selected for detailed description.

[0080] Assuming that the average density is 40%, the low density is 20%, and the high density is 60% as the target test pattern density, and three groups of OPC test patterns are respectively designed to establish models with three different pattern density ranges. The specific steps can be as follows:

[0081] ①. According to the layout design rules (Design Rule) and lithography target, design the initial test pattern group required for OPC model calibration. These test patterns can include the pattern...

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Abstract

The invention provides a process model molding and correcting method based on a graph density. The method comprises the steps that by adding redundant graphs with different graph densities and adjusting the OPC test graph region area, a test graph of a target graph density is obtained; according to silicon wafer data calibration models collected by the test graphs with different graph density ranges, OPC models under different graph density ranges are obtained; in the OPC processing process, a model representing the average density is used for correcting the whole layout data, layout density distribution is analyzed, graph areas with low density and high density are selected and subjected to correction with corresponding models respectively, and a mask graph is obtained finally.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a process model modeling and correction method based on graphic density. Background technique [0002] Optical proximity correction (OPC) technology has been widely used in the mass production of deep submicron integrated circuits, and model-based OPC processing methods are commonly used in key-level publications below the 90nm technology node. [0003] The basic principle of the model-based OPC processing method is: simulate the shape and size of the pattern after exposure or etching through the model, make corresponding corrections according to the deviation between the simulated data and the target data, and obtain the final mask after several iterations graphics. [0004] Therefore, the accuracy of OPC processing mainly depends on two aspects, one is the accuracy of the model, which is the ability of the model to predict the exposure (including etching) proces...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
CPCG06F30/398G06F2119/18
Inventor 何大权魏芳赵月兴倪念慈朱骏
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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