VREF (voltage reference) power supply circuit of DDR4 (double data rate 4) DIMM (dual in-line memory module)

A technology of power supply circuit and resistance voltage divider circuit, which is applied in the direction of information storage, static memory, digital memory information, etc., and can solve the problems of increased current consumption, reduced reliability of resistance voltage divider circuit, and reduced reliability.

Inactive Publication Date: 2017-01-04
ZHENGZHOU YUNHAI INFORMATION TECH CO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the increase of DDR4 clock speed, the bus frequency often works at 1.2GHz, and the high-frequency noise generated by various data lines and clock lines will also interfere with the VREF obtained by the voltage divider circuit, reducing the reliability of the resistor divider circuit. sex
In addition, in

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • VREF (voltage reference) power supply circuit of DDR4 (double data rate 4) DIMM (dual in-line memory module)
  • VREF (voltage reference) power supply circuit of DDR4 (double data rate 4) DIMM (dual in-line memory module)
  • VREF (voltage reference) power supply circuit of DDR4 (double data rate 4) DIMM (dual in-line memory module)

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0025] The core of the present invention is to provide a VREF power supply circuit for DDR4 DIMM. A voltage follower is added on the basis of the resistor divider circuit. The voltage follower reduces the output impedance of the VREF power supply circuit, increases the drive current, and increases the drive capability. Enhanced, the anti-interference ability is increased, thereby improving the reliability of the VREF power supply circuit of DDR4 DIMM.

[0026] In order to make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of the embodiments of the present invention, not all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a VREF (voltage reference) power supply circuit of a DDR4 (double data rate 4) DIMM (dual in-line memory module). The VREF power supply circuit comprises a resistance voltage dividing circuit and a voltage follower, the resistance voltage dividing circuit is used for outputting initial reference voltage, and the voltage follower is connected with an output end of the resistance voltage dividing circuit and performs voltage following for the initial reference voltage to obtain VREF. According to the VREF power supply circuit, the voltage follower is added based on the resistance voltage dividing circuit, output impedance of the VREF power supply circuit is reduced by the voltage follower, driving current is increased, and driving capability and anti-interference capability are improved, so that reliability of the VREF power supply circuit of the DDR4 DIMM is improved.

Description

technical field [0001] The invention relates to the technical field of DDR, in particular to a VREF power supply circuit of a DDR4 DIMM. Background technique [0002] DDR (Double Data Rate SDRAM, double data stream SDRAM) can transmit data twice in one clock cycle, and its bus transmission capacity is double that of ordinary SDRAM. DDR4 is the fourth generation of DDR, which has improved compared to previous generations in terms of power consumption and transmission speed. DDR4 DIMM (Dual-Inline-Memory-Modules, dual-inline memory module) is a DIMM composed of multiple DDR4 memory particles, also known as a memory stick. [0003] DDR4 uses the SSTL level standard, please refer to figure 1 , figure 1 It is the schematic diagram of the input and output mode of DDR4, and its power supply can be divided into three categories: 1. Main power supply VDD and VDDQ; 2. VTT for terminal matching; 3. Reference power supply VREF. Among them, VREF is used as a reference voltage for jud...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C11/4074
CPCG11C11/4074
Inventor 刘铁军
Owner ZHENGZHOU YUNHAI INFORMATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap