Semiconductor device and preparation method thereof
A semiconductor and device technology, applied in the field of semiconductor devices and their preparation, can solve problems such as unfavorable flash memory performance control, and achieve the effect of ensuring storage performance and improving speed
Active Publication Date: 2017-01-04
SEMICON MFG INT (SHANGHAI) CORP
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[0004] However, in the prior art, the two sidewalls (111a and 111b) of the floating gate 111 are formed by simultaneous etching, and the inclination angles of the two sidewalls of the floating gate 111 are the same, which is not conducive to the performance control of the flash memory.
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preparation example Construction
[0039] The core idea of the present invention is to provide a method for preparing a semiconductor device, such as figure 2 shown, including:
[0040] Step S11: providing a substrate, on which a floating gate layer is formed, and at least one control gate structure is formed on the floating gate layer, and the control gate structure has one side and another side opposite to the one side side;
[0041] Step S12: preparing offset spacers on one side and the other side of the control gate structure respectively;
[0042] Step S13: using the control gate structure and the offset sidewall as a mask, etching the floating gate layer to form a floating gate, the bottom of the sidewall of the floating gate is recessed inward to form a concave corner;
[0043] Step S14: removing the offset spacer on the other side of the control gate structure, exposing part of the floating gate; and
[0044] Step S15: removing the exposed floating gate.
[0045] After the step S14, the bottom of...
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The invention discloses a preparation method of a semiconductor device. The preparation method comprises that a substrate is provided, a floating gate layer is formed on the substrate, and at least one control grid structure, which includes two sides opposite to each other, is formed on the floating gate layer; offset sidewalls are prepared on the two sides of the control grid structure respectively; the floating gate layer is etched by taking the control grid structure and the offset sidewalls as a mask layer, a floating gate is formed, and the bottom of the sidewall of the floating gate recesses inwardly to form a recessed angle; the offset sidewall of the other side of the control grid structure is removed to expose part of the floating gate; and the exposed floating gate is removed. The invention also discloses the semiconductor device. According to the semiconductor device and the preparation method thereof, the inclination angles of the two sidewalls of the floating gate can be controlled independently, the flash memory speed can be improved, and the storage performance of the flash memory is ensured.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a preparation method thereof. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers, and USB flash drives. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structu...
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IPC IPC(8): H01L21/8247H01L27/115H10B41/00H10B69/00
CPCH10B41/00
Inventor 李敏
Owner SEMICON MFG INT (SHANGHAI) CORP