Polysilicon capacitor and manufacturing method thereof
A technology of polysilicon capacitor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of long manufacturing time, large thickness and high manufacturing cost of polysilicon capacitors, and achieves shortening manufacturing time, reducing manufacturing cost, The effect of reducing thickness
Inactive Publication Date: 2017-01-04
PEKING UNIV FOUNDER GRP CO LTD +1
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- Claims
- Application Information
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Problems solved by technology
[0004] The invention provides a polysilicon capacitor and its manufacturing method, which are used to solve the problems of long manufacturing time, high manufacturing cost and large thickness of the polysilicon capacitor in the prior art
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[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0030] figure 1 A flowchart of an embodiment of the method for manufacturing a polysilicon capacitor provided by the present invention, such as figure 1 shown, including:
[0031] 101. A layer of undoped polysilicon layer is grown on the substrate.
[0032] Among them, such as figure 2 as shown, figure 2 It is a schematic diagram after...
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Abstract
The invention relates to a polysilicon capacitor and a manufacturing method thereof. The method comprises steps of injecting conductive admixture in the bottom layer of a non-doped polysilicon layer to form a lower polar plate of low resistance of the polysilicon capacitor; injecting insulation admixture in the middle layer of the non-doped polysilicon layer to form an insulation dielectric layer of the polysilicon capacitor; injecting the conductive admixture in the upper layer of the non-doped polysilicon layer to form an upper polar plate of low resistance of the polysilicon capacitor. Therefore, the polysilicon capacitor is formed. Only a layer of polysilicon layer needs to grow, and thus the manufacturing time is shortened, the manufacturing cost is reduced, and the thickness of the polysilicon capacitor is reduced.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a polysilicon capacitor and a manufacturing method. Background technique [0002] The polysilicon capacitor is a three-layer structure capacitor formed by low-resistance polysilicon as the upper and lower plates, and silicon oxide or silicon nitride as the insulating medium. [0003] In the prior art, the manufacturing process of polysilicon capacitors is as follows: first grow a low-resistance polysilicon lower plate, then grow an intermediate silicon oxide or silicon nitride insulating layer, and finally grow a low-resistance polysilicon upper plate. However, in the prior art, in the manufacturing process of the polysilicon capacitor, three-layer plates need to be grown, which makes the manufacturing time of the polysilicon capacitor long, the manufacturing cost is high, and the thickness of the obtained polysilicon capacitor is large. Contents of the invention [000...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/92H01L29/04H01L21/328
CPCH01L29/04H01L29/66083H01L29/92
Inventor 贺冠中
Owner PEKING UNIV FOUNDER GRP CO LTD