Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

White light QLED device based on quantum well structural quantum dots and preparation method

A quantum dot luminescence and quantum dot technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as low luminous efficiency, complex structure, white light color coordinate drift, etc., and achieve simple device structure, reduce Loss, improve the effect of white light color coordinate drift

Active Publication Date: 2017-01-04
TCL CORPORATION
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a white light QLED device based on quantum well structure quantum dots and a preparation method, aiming to solve the existing problems of complex structure, low luminous efficiency and white light color coordinate drift of the existing white light QLED device. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • White light QLED device based on quantum well structural quantum dots and preparation method
  • White light QLED device based on quantum well structural quantum dots and preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] The present invention also provides a preferred embodiment of a preparation method for a white light QLED device based on quantum dots with a quantum well structure, such as figure 2 As shown, it includes the steps:

[0039] S1, depositing a hole injection layer on the surface of the substrate containing the bottom electrode;

[0040] S2. Depositing a hole transport layer on the surface of the hole injection layer;

[0041]S3. Depositing a quantum dot light-emitting layer on the surface of the hole transport layer. The material of the quantum dot light-emitting layer is a single white light quantum dot with a quantum well structure, and the well material of the single white light quantum dot is doped with red, green, and blue three A luminescent body or the single white light quantum dot is a multilayer quantum well structure quantum dot;

[0042] S4. Depositing an electron transport layer on the surface of the quantum dot luminescent layer;

[0043] S5. Fabricating...

Embodiment 1

[0045] The white light QLED device includes from bottom to top: substrate, bottom electrode, hole injection layer (HIL), hole transport layer (HTL), quantum dot light emitting layer (EML), electron transport layer (ETL) and top electrode. Wherein, the substrate is a glass substrate, the bottom electrode is 120nm ITO, and the material of the HIL is PEDOT:PSS (20nm). The material of the HTL is TFB, and the thickness of the HTL is 45nm. The material of the EML is a three-layer quantum well structure quantum dot (ZnS / ZnSe:Ag, Cu, Mn / ZnS) with a thickness of 30 nanometers. The material of the ETL is nano zinc oxide, and the thickness of the ETL is 20nm. The material of the top electrode is Al.

Embodiment 2

[0047] The white light QLED device includes from bottom to top: substrate, bottom electrode, hole injection layer (HIL), hole transport layer (HTL), quantum dot light emitting layer (EML), electron transport layer (ETL) and top electrode. The substrate is a glass substrate, the bottom electrode is 120nm ITO, and the material of the HIL is PEDOT:PSS (20nm). The material of the HTL is TFB, and the thickness of the HTL is 45nm. The material of the EML is ZnS / ZnSe:Mn / ZnS / ZnSe:Cu / ZnS / ZnSe:Ag / ZnS quantum dots with a seven-layer quantum well structure, and the thickness is 30 nanometers. The material of the ETL is nano zinc oxide, and the thickness of the ETL is 25nm. The material of the top electrode is Al.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a white light QLED device based on quantum well structural quantum dots and a preparation method. The device comprises a substrate, a bottom electrode, a hole injection layer, a hole transport layer, a quantum dot luminous layer, an electron transport layer and a top electrode which are arranged in sequence from bottom to top. The material of the quantum dot luminous layer is composed of quantum well structural single white light quantum dots. Red, green and blue those three kinds of luminophors are doped in the well material of the single white light quantum dots, or the single white light quantum dots are multi-layer quantum well structural quantum dots. According to the device and the method, through utilization of the single white light quantum dot material based on a quantum well structure as the luminophors, the high-efficiency white light QLED device can be obtained; on the one hand, the device is simple in structure, a stacking technology does not need to be employed, on the other hand, energy transfer among different colors of luminophors does not exist, and the problem of loss is reduced. According to the device and the method, the problem that a white light color coordinate drifts due to the fact that the stabilities of different luminophors are different can be improved clearly in the usage process of the device.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a white light QLED device and a preparation method based on quantum dots with a quantum well structure. Background technique [0002] As a luminescent material, quantum dots have the advantages of high color purity, high quantum yield, continuously adjustable luminous color and good stability. Light-emitting diodes based on quantum dots are thin and flexible, and are suitable for large-area coating processes. They not only have good application prospects in display, but also have potential advantages in the field of lighting due to their low manufacturing cost. . [0003] Usually, the method of obtaining white light is mainly prepared by mixing three primary colors. Therefore, there are generally two device structures for white light-emitting diodes. One is to use RGB three-primary color stacking, which means that there are three colors of red, green and blue in the same device...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K71/00
Inventor 钱磊杨一行曹蔚然向超宇陈崧
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com