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AlGaInP-base light emitting diode epitaxial wafer, AlGaInP-base light emitting diode chip and preparation method thereof

A technology of light-emitting diodes and epitaxial wafers, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as poor reverse antistatic ability, reduce forward voltage, avoid excessive local current, and improve reverse antistatic effect of ability

Active Publication Date: 2017-02-08
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of poor reverse antistatic ability in the prior art, the embodiment of the present invention provides an AlGaInP-based light-emitting diode epitaxial wafer, chip and preparation method

Method used

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  • AlGaInP-base light emitting diode epitaxial wafer, AlGaInP-base light emitting diode chip and preparation method thereof
  • AlGaInP-base light emitting diode epitaxial wafer, AlGaInP-base light emitting diode chip and preparation method thereof
  • AlGaInP-base light emitting diode epitaxial wafer, AlGaInP-base light emitting diode chip and preparation method thereof

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Embodiment 1

[0035] An embodiment of the present invention provides an AlGaInP-based light-emitting diode epitaxial wafer, see figure 1 , the AlGaInP-based light-emitting diode epitaxial wafer includes a GaAs substrate 1, and an N-type GaAs buffer layer 2, a dislocation barrier layer 3, an N-type GaInP etch stop layer 4, and an N+-type GaAs ohmic contact stacked on the GaAs substrate 1 in sequence. Layer 5, N+ type insertion layer 6, N type current spreading layer 7, N type confinement layer 8, active layer 9, P type confinement layer 10, P type current spreading layer 11.

[0036] It should be noted that N-type means that N-type dopant is doped, and N+ type means that the doped N-type dopant has a higher concentration than N-type, which belongs to highly doped or heavily doped.

[0037] In this example, see figure 2 , the N+ type insertion layer 6 includes an N+ type GaInP layer 6a, an N+ type Al x Ga 1-x InP layer 6b, 0.3<x<0.6.

[0038]Optionally, the thickness of the N+ type GaInP...

Embodiment 2

[0056] The embodiment of the present invention provides a method for preparing an AlGaInP-based light-emitting diode epitaxial wafer, which is suitable for preparing the AlGaInP-based light-emitting diode epitaxial wafer provided in Example 1. See Figure 5 , the preparation method comprises:

[0057] Step 201: growing an N-type GaAs buffer layer on a GaAs substrate.

[0058] Optionally, the thickness of the N-type GaAs buffer layer may be 150-300 nm, the growth temperature may be 650-670° C., V / III may be 20-30, and the growth rate may be 0.5-0.8 nm / s.

[0059] Wherein, V / III is the molar concentration ratio of atoms with valence V to atoms with valence III.

[0060] Step 202: growing a dislocation blocking layer on the N-type GaAs buffer layer.

[0061] Specifically, the dislocation blocking layer includes alternately stacked first sublayers and second sublayers, the first sublayer is an AlAs layer, and the second sublayer is a GaAs layer or an Al y Ga 1-y As layer, 0.5<...

Embodiment 3

[0091] An embodiment of the present invention provides an AlGaInP-based light-emitting diode chip, see Figure 6 The AlGaInP-based light-emitting diode chip includes a substrate 12, and a P-type current spreading layer 11, a P-type confinement layer 10, an active layer 9, an N-type confinement layer 8, an N-type current spreading layer 7, N+ type insertion layer 6 and N+ type GaAs ohmic contact layer 5 .

[0092] In this embodiment, the N+ type insertion layer includes N+ type Al which is sequentially stacked on the N type current spreading layer. x Ga 1-x InP layer, N+ type GaInP layer, 0.3

[0093] Optionally, the thickness of the N+ type GaInP layer can be 10-20 nm, the doping concentration can be 3E18-6E18, and the N-type dopant can be SiH 4 、Si 2 h 6 , Te(C 2 h 5 ) 2 any of the.

[0094] Optionally, N+ type Al x Ga 1-x The thickness of the InP layer can be 10-20nm, the doping concentration can be 3E18-6E18, and the N-type dopant can be SiH 4 、Si 2 h 6...

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Abstract

The invention discloses an AlGaInP-base light emitting diode epitaxial wafer, an AlGaInP-base light emitting diode chip and a preparation method thereof, wherein the AlGaInP-base light emitting diode epitaxial wafer, the AlGaInP-base light emitting diode chip and the preparation method thereof belong to the field of semiconductor technology. The AlGaInP-base light emitting diode epitaxial wafer comprises a GaAs substrate, an N-type GaAs buffer layer, an N-type GaInP corrosion stopping layer, an N+-type GaAs ohmic contact layer, an N-type current extending layer, an N-type limiting layer, an active layer, a P-type restricting layer and a P-type current extending layer, wherein the N-type GaAs buffer layer, the N-type GaInP corrosion stopping layer, the N+-type GaAs ohmic contact layer, the N-type current extending layer, the N-type limiting layer, the active layer, the P-type restricting layer and the P-type current extending layer are successively laminated on the GaAs substrate. The AlGaInP-base light emitting diode epitaxial wafer further comprises an N+-type interposed layer which is laminated between the N+-type GaAs ohmic contact layer and the N-type current extending layer. The N+-type interposed layer comprises an N+-type GaInP layer and an N+-type AlxGal-xInP layer which are successively laminated on the N+-type GaAs ohmic contact layer, wherein 0.3<x<0.6. The AlGaInP-base light emitting diode epitaxial wafer, the AlGaInP-base light emitting diode chip and the preparation method improve reverse antistatic capability.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an AlGaInP-based light-emitting diode epitaxial wafer, chip and preparation method. Background technique [0002] In recent years, AlGaInP light-emitting diodes (Light Emiting Diodes, LEDs for short) with high luminance characteristics have been widely used in more and more application fields, and the market demand is constantly expanding. [0003] During the preparation of AlGaInP LED epitaxial wafers, the epitaxial layer is generally grown on the GaAs substrate, but the GaAs substrate will absorb the light emitted by the light-emitting area, so after the epitaxial layer growth is completed, the Si substrate or sapphire substrate will be bonded. To the epitaxial layer, and remove the GaAs substrate, to prevent the GaAs substrate absorbing light from affecting the external quantum efficiency of the LED. [0004] In the process of realizing the present invention, the inven...

Claims

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Application Information

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IPC IPC(8): H01L33/30H01L33/14H01L33/12H01L33/00
CPCH01L33/0062H01L33/0066H01L33/12H01L33/14H01L33/305
Inventor 邢振远李彤王世俊
Owner HC SEMITEK ZHEJIANG CO LTD
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