Thin-film transistor structure

Abstract

The present invention provides a thin-film transistor structure, which comprises a substrate, a first metal layer, a first buffer layer, a semiconductor layer, a second metal layer, a second buffer layer, and a third metal layer. The second metal layer includes a gap region; the semiconductor layer includes a channel region. The present invention uses the first and third metal layers to form double gates. By controlling the channel region using the double-gate structure, the turn-on current of the thin-film transistor can be enhanced and thus achieving the efficacy of improving the driving efficiency of the device.

Description

technical field [0001] The invention relates to a thin film transistor structure, especially a thin film transistor structure with double gates. Background technique [0002] In the flat panel display industry, Thin Film Transistor Liquid Crystal Display (TFTL-LCD) is the hottest product today, and because thin film transistors are widely used in flat panel display products, the quality of thin film transistors (such as current conduction, etc.) The overall quality of the display has an inseparable relationship. [0003] When the TFT is turned on, electrons will diffuse from the source to the drain. In thin film transistors, according to the different semiconductor layer materials, it can be subdivided into polysilicon thin film transistors and amorphous silicon thin film transistors. Polysilicon thin film transistors have the advantage of high carrier mobility, but at the same time they have a large leakage current. The disadvantage of amorphous silicon thin film transist...

AI Technical Summary

Problems solved by technology

In thin film transistors, according to the different semiconductor layer materials, it can be subdivided into polysilicon thin film transistors and amorphous silicon thin film transistors. Polysilicon thin film transistors have the advantage of high carrier mobility, but at the same time they have a large leakage current. The disadvantage of amorphous silicon thin film transistors is that the carrier mobility of amorphous silicon thin film transistors is lower than that of polycrystalline silicon thin film transistors. This factor causes the amorphous silicon semiconductor layer to have a higher resistivity, which in turn limits the conductivity of the component current. The turn-on current of the transistor will also indirectly cause the driving efficiency to be less than ideal

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