p‑i‑n—‑n-type gan single-photon avalanche detector

Abstract

The present invention provides a p-i-n-(-n)-type GaN single-photon avalanche detector. The detector comprises a p-GaN upper contact layer, an i-GaN avalanche multiplication layer, an n<->-GaN hole-injection layer and an n-AlGaN lower contact layer arranged from up to down, wherein the n<->-GaN hole-injection layer is light doping. The p-i-n-(-n)-type GaN single-photon avalanche detector replaces an n-GaN layer with a traditional pin-type structure with the n<->GaN / n-AlGaN heterojunction, takes the n<->-GaN as an absorption injection layer, and takes the n-AlGaN as the lower contact layer so as to facilitate the improvement of the crystalline quality of epitaxial materials of an active region and improve the external quantum efficiency and the cavity minority carrier injection efficiency; and moreover, the parameters, such as doping concentration, thickness and the like, of the n<->-GaN layer are flexible and adjustable, and a very high avalanche gain can be obtained under the low work bias through compromise optimization.

Description

technical field [0001] The invention belongs to the technical field of wide-bandgap semiconductor optoelectronic devices, and in particular relates to a p-i-n-n type GaN single-photon avalanche detector. Background technique [0002] At present, with the continuous upgrading of detection technology, ultraviolet detectors are developing from the first and second generation electric vacuum devices to the third generation smart all-solid-state devices. According to different material systems, all-solid-state ultraviolet detectors are mainly divided into ZnMgO / ZnO, diamond, Si, SiC, AlGaN / GaN and other technologies. Among them, although ZnMgO / ZnO and diamond have the advantages of wide bandgap, good thermal stability, and high dielectric constant in terms of material properties, they are limited by the existing material technology level, and the repeatability of electrical characteristics of these two types of detectors is poor. The problem of obvious continuous photocurrent ef...

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Problems solved by technology

[0004] The present invention provides a p-i-n—n-type GaN single-photon avalanche detector to solve the problems of insufficient avalanche internal gain, low single-photon detection efficiency and high working bias voltage existing in current GaN single-photon avalanche detectors

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