Gas reaction cavity for preparing YBCO strip by MOCVD

A gas reaction chamber and reaction technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of low utilization rate of metal organic sources, uneven temperature field distribution, uneven film thickness, etc. Guarantee out-of-plane uniformity and consistency, improve utilization, and achieve the effect of small diffusion space

Active Publication Date: 2017-02-22
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the gas ejected from the double shower head structure will lead to uneven distribution of the temperature field directly under the shower head, resulting in uneven thickness of the deposited film, and this deposition method has low utilization rate of metal-organic sources and high cost

Method used

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  • Gas reaction cavity for preparing YBCO strip by MOCVD
  • Gas reaction cavity for preparing YBCO strip by MOCVD
  • Gas reaction cavity for preparing YBCO strip by MOCVD

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Embodiment Construction

[0021] The present invention will be further described below in conjunction with drawings and embodiments.

[0022] figure 1 The slender copper tube in the middle of the reaction chamber is the reaction tube, and the metal substrate baseband deposits thin films in it. The reaction copper tube is wound with a copper conduction belt and connected to the condensation tube outside the reaction chamber. The metal substrate baseband itself is heated by current, and the resulting heat radiation makes the temperature in the reaction copper tube very high. Because copper has good Thermal conductivity, in order to prevent the metal-organic source from reacting before reaching the surface of the substrate base tape, the copper conduction tape can conduct excessive heat to the condenser pipe, effectively inhibiting this from happening. Two copper hoses (10, 11) are respectively connected to the evaporation tube in the MOCVD equipment and the exhaust pipe connected to the vacuum pump. Acc...

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Abstract

The invention belongs to the technical field of film preparation, in particular to a gas reaction cavity for preparing a YBCO strip by MOCVD. The gas reaction cavity comprises a reaction copper pipe, intake and exhaust bins connected to two ends of the reaction copper pipe, and a cooling pipe. Two ends of the reaction copper pipe are connected to the intake and exhaust bins; a heat conducting strip is wound on the reaction copper pipe and the cooling pipe; the intake and exhaust bins are respectively provided with holes, and are on the same one straight line with the reaction copper pipe in middle of the reaction cavity; and a substrate penetrates through the holes in use. The whole reaction process is only concentrated in the reaction copper pipe in use; in the process from entering the reaction chamber to extraction of gas, the dispersion space is less, so that the utilization rate of a metal organic source is largely increased, and the cost is reduced; meanwhile, the synchronous film growth on two surfaces of the substrate can be realized; and the outer-surface uniformity and consistency of prepared films are guaranteed.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and relates to a gas reaction chamber used for metal-organic chemical vapor deposition (MOCVD), which can be used for the preparation of YBCO superconducting strips, specifically a gas reaction chamber for preparing YBCO strips by MOCVD cavity. Background technique [0002] Metal-organic compound chemical vapor deposition, its English name is Metal-organic Chemical VaporDe7position, abbreviated as MOCVD, is a new type of vapor phase epitaxy growth technology developed on the basis of vapor phase epitaxy (VPE). Organic compounds of elements and hydrides of group V and VI elements are used as source materials for vapor deposition, and various III-V or II-VI compounds are grown on high-temperature substrates through diffusion, gas-phase reactions, and surface chemical reactions. Thin-layer single-crystal materials of semiconductors and their multicomponent solid solutions. Compared w...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/18
CPCC23C16/18C23C16/4411C23C16/455
Inventor 陶伯万赵瑞鹏刘青张宇希李言荣
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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